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Paper Abstract and Keywords
Presentation 2013-06-18 16:10
[Invited Lecture] Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices
Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61
Abstract (in Japanese) (See Japanese page) 
(in English) Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigated by means of electrical measurements of MOS capacitors with high temperature hydrogen annealing. In contrast to a SiO2/Si system, positive mobile ions were found in hydrogen-passivated SiO2/SiC structures, leading to significant bias-temperature instability (BTI) of SiC-MOS devices. We also found that the mobile ions in the oxide could be completely eliminated by utilizing bias-temperature stress (BTS) and subsequent oxide etching while preserving good interface quality of SiC-MOS devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon carbide / MOS device / Thermal oxide / Mobile ion / Hydrogen annealing / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-61, pp. 87-90, June 2013.
Paper # SDM2013-61 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices 
Sub Title (in English)  
Keyword(1) Silicon carbide  
Keyword(2) MOS device  
Keyword(3) Thermal oxide  
Keyword(4) Mobile ion  
Keyword(5) Hydrogen annealing  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Heiji Watanabe  
1st Author's Affiliation Osaka University (Osaka Univ)
2nd Author's Name Atthawut Chanthaphan  
2nd Author's Affiliation Osaka University (Osaka Univ)
3rd Author's Name Yuki Nakano  
3rd Author's Affiliation ROHM CO., LTD. (ROHM)
4th Author's Name Takashi Nakamura  
4th Author's Affiliation ROHM CO., LTD. (ROHM)
5th Author's Name Takuji Hosoi  
5th Author's Affiliation Osaka University (Osaka Univ)
6th Author's Name Takayoshi Shimura  
6th Author's Affiliation Osaka University (Osaka Univ)
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Speaker Author-1 
Date Time 2013-06-18 16:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-61 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.87-90 
#Pages 4 
Date of Issue 2013-06-11 (SDM) 

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