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Paper Abstract and Keywords
Presentation 2013-06-18 11:55
Guiding principles of Long Lifespan Archive Memory using MONOS type Memory
Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba) SDM2013-52
Abstract (in Japanese) (See Japanese page) 
(in English) There is an increased demand for digital technology in archival storage infrastructure. Therefore, a long lifespan archive memory with high density integration is inevitable. MONOS (Metal-Oxide-Nitride-Oxide- Semiconductor) type memories have attracted a great attention for the future high density integration non-volatile memories. It is known that MONOS type memories show two types of structural changes in general. One is related to N vacancy defects in Silicon Nitride. These types of defects cause a reversible structural change during Program/Erase (P/E) cycles which is suitable for devices with high P/E endurance. The other is the defect related to excess O atoms in Silicon Nitride. These defects cause an irreversible and a large structural change during P/E cycles, since meta-stable state structure appears after P/E operation. This type of structural change is not suited for high P/E endurance memories. However, it is suitable for a long lifespan archive memory. Moreover, a long lifespan archive memory is essentially read-only-memory (ROM), which does not require the high P/E cycles endurance. In this sense, the guiding principles for a long lifespan ROM is much different from the well-known memories such as flash memories. We focus our attention on this point, and our present calculations clearly show that MONOS-type memories with O related defects reveal large and irreversible structural change upon carrier injection, indicating that MONOS is one of the most promising high density archive memories.
Keyword (in Japanese) (See Japanese page) 
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Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-52, pp. 43-46, June 2013.
Paper # SDM2013-52 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Guiding principles of Long Lifespan Archive Memory using MONOS type Memory 
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1st Author's Name Hiroki Shirakawa  
1st Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
2nd Author's Name Keita Yamaguchi  
2nd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
3rd Author's Name Katsumasa Kamiya  
3rd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
4th Author's Name Kenji Shiraishi  
4th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
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Speaker Author-1 
Date Time 2013-06-18 11:55:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-52 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.43-46 
#Pages 4 
Date of Issue 2013-06-11 (SDM) 

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