Paper Abstract and Keywords |
Presentation |
2013-07-04 16:15
[Invited Talk]
Low-Voltage Non-volatile Memory Devices Technology and System Application
-- To Realize Zero Stand-by LSIs -- Masanori Hayashikoshi (Renesas Electronics) ICD2013-32 Link to ES Tech. Rep. Archives: ICD2013-32 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Non-volatile memory devices typified by Flash memory has become a technology core for all industries. In this presentation, we will describe the technology trends of non-volatile memory device which is expected as embedded memory in MCU, for the system application. In addition, as a challenge to further reduce power consumption, we discuss the possibility of fusion of the non-volatile memory device technology and the normally-off computing technology. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Non-Volatile Memory / NVRAM / Low-voltage / Low-power / Normally-off computing / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 112, ICD2013-32, pp. 43-48, July 2013. |
Paper # |
ICD2013-32 |
Date of Issue |
2013-06-27 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2013-32 Link to ES Tech. Rep. Archives: ICD2013-32 |
Conference Information |
Committee |
ICD ITE-IST |
Conference Date |
2013-07-04 - 2013-07-05 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
San Refre Hakodate |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface Circuitry |
Paper Information |
Registration To |
ICD |
Conference Code |
2013-07-ICD-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low-Voltage Non-volatile Memory Devices Technology and System Application |
Sub Title (in English) |
To Realize Zero Stand-by LSIs |
Keyword(1) |
Non-Volatile Memory |
Keyword(2) |
NVRAM |
Keyword(3) |
Low-voltage |
Keyword(4) |
Low-power |
Keyword(5) |
Normally-off computing |
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1st Author's Name |
Masanori Hayashikoshi |
1st Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
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Speaker |
Author-1 |
Date Time |
2013-07-04 16:15:00 |
Presentation Time |
45 minutes |
Registration for |
ICD |
Paper # |
ICD2013-32 |
Volume (vol) |
vol.113 |
Number (no) |
no.112 |
Page |
pp.43-48 |
#Pages |
6 |
Date of Issue |
2013-06-27 (ICD) |
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