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Paper Abstract and Keywords
Presentation 2013-08-09 09:25
Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45
Abstract (in Japanese) (See Japanese page) 
(in English) GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) surface roughness of GaSb layer is 0.4 nm, which is sufficiently flat enough to fabricate MOS device. The hall mobility of μe ~ 2400 cm2/Vsec is obtained, which corresponds to that of approximately 80 % of the bulk mobility. The effect of vacuum annealing for surface cleaning on n-type GaSb metal-oxide-semiconductor (MOS) structures with Al2O3 dielectric is studied. From thermal desorption spectroscopy (TDS) observation, we confirmed that desorption of GaSb native oxide were desorbed using vacuum annealing. GaSb MOS structures with vacuum annealing show unpinned C-V characteristics from accumulation to depletion region. The minimum Dit of ~ 4×1012 cm-2eV-1 was achieved for the sample with vacuum annealing at 350 ℃. The vacuum annealing to remove GaSb oxide is promising approach for improving the characteristics of Al2O3/GaSb interfaces.
Keyword (in Japanese) (See Japanese page) 
(in English) GaSb / MOSFET / MOS Capacitor / Al2O3 / High-k / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 176, ED2013-45, pp. 37-42, Aug. 2013.
Paper # ED2013-45 
Date of Issue 2013-08-01 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2013-08-08 - 2013-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) University of Toyama 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2013-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces 
Sub Title (in English)  
Keyword(1) GaSb  
Keyword(2) MOSFET  
Keyword(3) MOS Capacitor  
Keyword(4) Al2O3  
Keyword(5) High-k  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takahiro Gotow  
1st Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
2nd Author's Name Sachie Fujikawa  
2nd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
3rd Author's Name Hiroki I. Fujishiro  
3rd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
4th Author's Name Mutsuo Ogura  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Tetsuji Yasuda  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Tatsuro Maeda  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2013-08-09 09:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-45 
Volume (vol) vol.113 
Number (no) no.176 
Page pp.37-42 
#Pages 6 
Date of Issue 2013-08-01 (ED) 

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