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| Presentation | 2013-08-29 10:45 Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates Kohei Miura, Yasuhiro Iguchi (Sumitomo Electric), Yuuichi Kawamura (Osaka Prefecture Univ.)  R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 Link to ES Tech. Rep. Archives: EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually grown on GaSb substrates. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. We have focused on InP substrate with high transparency and relatively small lattice mismatch. The crystallographic and optical quality of SLs improved as GaSb buffer layer thickness increased due to the reduction of threading dislocations. Infrared sensors with InAs/GaSb SL absorption layers grown on InP substrates were fabricated for the first time. Mid-infrared sensors using InAs/GaSb SLs on InP substrates are promising. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaSb / InAs / type-II superlattice / InP / mid-infrared sensor / dark current / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 190, LQE2013-31, pp. 19-24, Aug. 2013. | |
| Paper # | LQE2013-31 | |
| Date of Issue | 2013-08-22 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 Link to ES Tech. Rep. Archives: EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 |
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| Conference Information | |
| Committee | OPE LQE CPM EMD R |
| Conference Date | 2013-08-29 - 2013-08-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | sun-refre Hakodate |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2013-08-OPE-LQE-CPM-EMD-R |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates |
| Sub Title (in English) | |
| Keyword(1) | GaSb |
| Keyword(2) | InAs |
| Keyword(3) | type-II superlattice |
| Keyword(4) | InP |
| Keyword(5) | mid-infrared sensor |
| Keyword(6) | dark current |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kohei Miura |
| 1st Author's Affiliation | Sumitomo Electric Industries, Limited (Sumitomo Electric) |
| 2nd Author's Name | Yasuhiro Iguchi |
| 2nd Author's Affiliation | Sumitomo Electric Industries, Limited (Sumitomo Electric) |
| 3rd Author's Name | Yuuichi Kawamura |
| 3rd Author's Affiliation | Osaka Prefecture University (Osaka Prefecture Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-08-29 10:45:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | R2013-32, EMD2013-38, CPM2013-57, OPE2013-61, LQE2013-31 |
| Volume (vol) | vol.113 |
| Number (no) | no.186(R), no.187(EMD), no.188(CPM), no.189(OPE), no.190(LQE) |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2013-08-22 (R, EMD, CPM, OPE, LQE) |
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