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Paper Abstract and Keywords
Presentation 2013-08-29 10:45
Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates
Kohei Miura, Yasuhiro Iguchi (Sumitomo Electric), Yuuichi Kawamura (Osaka Prefecture Univ.) R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31
Abstract (in Japanese) (See Japanese page) 
(in English) Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually grown on GaSb substrates. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. We have focused on InP substrate with high transparency and relatively small lattice mismatch. The crystallographic and optical quality of SLs improved as GaSb buffer layer thickness increased due to the reduction of threading dislocations. Infrared sensors with InAs/GaSb SL absorption layers grown on InP substrates were fabricated for the first time. Mid-infrared sensors using InAs/GaSb SLs on InP substrates are promising.
Keyword (in Japanese) (See Japanese page) 
(in English) GaSb / InAs / type-II superlattice / InP / mid-infrared sensor / dark current / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 190, LQE2013-31, pp. 19-24, Aug. 2013.
Paper # LQE2013-31 
Date of Issue 2013-08-22 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31

Conference Information
Committee OPE LQE CPM EMD R  
Conference Date 2013-08-29 - 2013-08-30 
Place (in Japanese) (See Japanese page) 
Place (in English) sun-refre Hakodate 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2013-08-OPE-LQE-CPM-EMD-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates 
Sub Title (in English)  
Keyword(1) GaSb  
Keyword(2) InAs  
Keyword(3) type-II superlattice  
Keyword(4) InP  
Keyword(5) mid-infrared sensor  
Keyword(6) dark current  
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Keyword(8)  
1st Author's Name Kohei Miura  
1st Author's Affiliation Sumitomo Electric Industries, Limited (Sumitomo Electric)
2nd Author's Name Yasuhiro Iguchi  
2nd Author's Affiliation Sumitomo Electric Industries, Limited (Sumitomo Electric)
3rd Author's Name Yuuichi Kawamura  
3rd Author's Affiliation Osaka Prefecture University (Osaka Prefecture Univ.)
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Speaker Author-1 
Date Time 2013-08-29 10:45:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # R2013-32, EMD2013-38, CPM2013-57, OPE2013-61, LQE2013-31 
Volume (vol) vol.113 
Number (no) no.186(R), no.187(EMD), no.188(CPM), no.189(OPE), no.190(LQE) 
Page pp.19-24 
#Pages 6 
Date of Issue 2013-08-22 (R, EMD, CPM, OPE, LQE) 

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