Paper Abstract and Keywords |
Presentation |
2013-11-14 15:50
[Invited Talk]
Advanced MOSFET simulations using a quantum energy trasport model Shohiro Sho, Shinji Odanaka (Osaka Univ.) SDM2013-105 Link to ES Tech. Rep. Archives: SDM2013-105 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A quantum energy transport(QET) model is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. In this work, we derive a 4-moments QET model. Space discretization is performed by high accuracy nonlinear schemes and numerical stability is obtained by an iterative solution method with a relaxation method. Transport properties in Si, Ge and In$_0.53$Ga$_0.47$As n-MOSFETs are evaluated. A 4-moments QET model allows analysis of carrier transport including quantum confinement and hot carrier effects. The charge control by the gate is effectively reduced in the Ge and In$_0.53$Ga$_0.47$As n-MOSFET due to low effective mass and high permittivity of materials. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Quantum energy transport(QET) model / Device simulation / MOSFET / Ge / InGaAs / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 296, SDM2013-105, pp. 31-36, Nov. 2013. |
Paper # |
SDM2013-105 |
Date of Issue |
2013-11-07 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-105 Link to ES Tech. Rep. Archives: SDM2013-105 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-11-14 - 2013-11-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit Simulations, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Advanced MOSFET simulations using a quantum energy trasport model |
Sub Title (in English) |
|
Keyword(1) |
Quantum energy transport(QET) model |
Keyword(2) |
Device simulation |
Keyword(3) |
MOSFET |
Keyword(4) |
Ge |
Keyword(5) |
InGaAs |
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Shohiro Sho |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Shinji Odanaka |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
|
3rd Author's Affiliation |
() |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2013-11-14 15:50:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2013-105 |
Volume (vol) |
vol.113 |
Number (no) |
no.296 |
Page |
pp.31-36 |
#Pages |
6 |
Date of Issue |
2013-11-07 (SDM) |
|