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Paper Abstract and Keywords
Presentation 2013-11-28 10:50
Energy evaluation of writing reduction method for non-volatile memory
Masashi Tawada, Shinji Kimura, Masao Yanagisawa, Nozomu Togawa (Waseda Univ.) VLD2013-81 DC2013-47
Abstract (in Japanese) (See Japanese page) 
(in English) Non-volatile memory has many advantages over SRAM, such as high density, low leakage power, and
non-volatility. However, one of its largest problems is that it consumes a large amount of energy in writing. It
is quite necessary to reduce the number of writing bits and thus decrease its writing energy.We have proposed a
memory writing reduction method based on error correcting codes. When a data is written into a memory, we do
not write it directly but encode it into a codeword. Then the number of writing bits into memory is also limited
in data writing. In this paper, we demonstrate several experimental evaluations from the viewpoints of energy
reduction and discuss the effectiveness of our proposed writing-reduction codes.
Keyword (in Japanese) (See Japanese page) 
(in English) non-voltaile memory / write reduction / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 320, VLD2013-81, pp. 141-146, Nov. 2013.
Paper # VLD2013-81 
Date of Issue 2013-11-20 (VLD, DC) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2013-81 DC2013-47

Conference Information
Committee VLD DC IPSJ-SLDM CPSY RECONF ICD CPM  
Conference Date 2013-11-27 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Gaia 2013 -New Field of VLSI Design- 
Paper Information
Registration To VLD 
Conference Code 2013-11-VLD-DC-SLDM-CPSY-RECONF-ICD-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Energy evaluation of writing reduction method for non-volatile memory 
Sub Title (in English)  
Keyword(1) non-voltaile memory  
Keyword(2) write reduction  
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1st Author's Name Masashi Tawada  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Shinji Kimura  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Masao Yanagisawa  
3rd Author's Affiliation Waseda University (Waseda Univ.)
4th Author's Name Nozomu Togawa  
4th Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2013-11-28 10:50:00 
Presentation Time 25 minutes 
Registration for VLD 
Paper # VLD2013-81, DC2013-47 
Volume (vol) vol.113 
Number (no) no.320(VLD), no.321(DC) 
Page pp.141-146 
#Pages 6 
Date of Issue 2013-11-20 (VLD, DC) 

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