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Paper Abstract and Keywords
Presentation 2013-12-13 09:40
Photo Sensor using Poly-Si Thin-Film Devices
Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) SDM2013-118 Link to ES Tech. Rep. Archives: SDM2013-118
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we developed photo sensors using illuminance dependence of current-voltage characteristics of pin Thin-Film Photo-Transistors (TFPT) and the detection circuits by poly-Si TFTs, and applied them to artificial retinas. We clarified the relationship between the voltage of the analog voltage output photosensors and illuminance as well as the relationship between the frequency of the frequency output photosensors and illuminance. We also confirmed them in the artificial retinas. Furthermore, we produced an eyeball model to examine the dynamic performance and succeeded in capturing the ON / OFF and movement of the light source as moving images. Moreover, we were able to recognize not only a simple circular shape of the light source but also text "T" and "C" by retinal prosthesis. Finally, we found that we can convert AC power to DC power wirelessly, and succeeded in recognizing the shape of light source of 800 [Lx] which was close to actual environment light.
Keyword (in Japanese) (See Japanese page) 
(in English) Thin-Film Photo-Transistor(TFPT) / Poly-Si TFT / artificial retinas / Retinal prosthesis / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 351, SDM2013-118, pp. 13-18, Dec. 2013.
Paper # SDM2013-118 
Date of Issue 2013-12-06 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-118 Link to ES Tech. Rep. Archives: SDM2013-118

Conference Information
Committee SDM  
Conference Date 2013-12-13 - 2013-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si related materials 
Paper Information
Registration To SDM 
Conference Code 2013-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Photo Sensor using Poly-Si Thin-Film Devices 
Sub Title (in English)  
Keyword(1) Thin-Film Photo-Transistor(TFPT)  
Keyword(2) Poly-Si TFT  
Keyword(3) artificial retinas  
Keyword(4) Retinal prosthesis  
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1st Author's Name Shohei Oyama  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Atsushi Matsumura  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Takayuki Kadonome  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Takumi Tanaka  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
5th Author's Name Tokiyoshi Matsuda  
5th Author's Affiliation Ryukoku University (Ryukoku Univ.)
6th Author's Name Mutsumi Kimura  
6th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker Author-1 
Date Time 2013-12-13 09:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-118 
Volume (vol) vol.113 
Number (no) no.351 
Page pp.13-18 
#Pages
Date of Issue 2013-12-06 (SDM) 


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