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Paper Abstract and Keywords
Presentation 2013-12-13 09:00
Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress
Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116
Abstract (in Japanese) (See Japanese page) 
(in English) In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because of of its high mobility, TAOS is expected as a channel layer of the thin-film transistor which can provide high resolution display with low power consumption. However, while having a high electron mobility, it is insufficient to ensure the reliability under the stress with heat and light for TAOS. TFTs of transparent flexible display are expected to be fabricated on low thermal conductive substrate, such as glass or plastic.These materials tend to accumulate heat that accelerate the degradation of the device. In this study, we analyzed the thermal degradation of the TAOS TFT by applying pulse voltage stress which is approximated to the frame frequency of the display.
Keyword (in Japanese) (See Japanese page) 
(in English) pulse stress / TAOS / thermal distribution / thermal analysis / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 351, SDM2013-116, pp. 1-5, Dec. 2013.
Paper # SDM2013-116 
Date of Issue 2013-12-06 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-12-13 - 2013-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si related materials 
Paper Information
Registration To SDM 
Conference Code 2013-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress 
Sub Title (in English)  
Keyword(1) pulse stress  
Keyword(2) TAOS  
Keyword(3) thermal distribution  
Keyword(4) thermal analysis  
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Keyword(6)  
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1st Author's Name Kahori Kise  
1st Author's Affiliation Nara Institute of Technology (NAIST)
2nd Author's Name Shigekazu Tomai  
2nd Author's Affiliation Idemitsu Kosan Co., Ltd. (Idemitsu Kosan)
3rd Author's Name Yoshihiro Ueoka  
3rd Author's Affiliation Nara Institute of Technology (NAIST)
4th Author's Name Haruka Yamazaki  
4th Author's Affiliation Nara Institute of Technology (NAIST)
5th Author's Name Satoshi Urakawa  
5th Author's Affiliation Nara Institute of Technology (NAIST)
6th Author's Name Koki Yano  
6th Author's Affiliation Idemitsu Kosan Co., Ltd. (Idemitsu Kosan)
7th Author's Name Dapeng Wang  
7th Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
8th Author's Name Mamoru Furuta  
8th Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
9th Author's Name Masahiro Horita  
9th Author's Affiliation Nara Institute of Technology (NAIST)
10th Author's Name Yasuaki Ishikawa  
10th Author's Affiliation Nara Institute of Technology (NAIST)
11th Author's Name Yukiharu Uraoka  
11th Author's Affiliation Nara Institute of Technology (NAIST)
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Speaker Author-1 
Date Time 2013-12-13 09:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-116 
Volume (vol) vol.113 
Number (no) no.351 
Page pp.1-5 
#Pages 5 
Date of Issue 2013-12-06 (SDM) 

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