Paper Abstract and Keywords |
Presentation |
2013-12-13 09:00
Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116 Link to ES Tech. Rep. Archives: SDM2013-116 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because of of its high mobility, TAOS is expected as a channel layer of the thin-film transistor which can provide high resolution display with low power consumption. However, while having a high electron mobility, it is insufficient to ensure the reliability under the stress with heat and light for TAOS. TFTs of transparent flexible display are expected to be fabricated on low thermal conductive substrate, such as glass or plastic.These materials tend to accumulate heat that accelerate the degradation of the device. In this study, we analyzed the thermal degradation of the TAOS TFT by applying pulse voltage stress which is approximated to the frame frequency of the display. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
pulse stress / TAOS / thermal distribution / thermal analysis / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 351, SDM2013-116, pp. 1-5, Dec. 2013. |
Paper # |
SDM2013-116 |
Date of Issue |
2013-12-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2013-116 Link to ES Tech. Rep. Archives: SDM2013-116 |
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