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Paper Abstract and Keywords
Presentation 2013-12-16 14:20
An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-93
Abstract (in Japanese) (See Japanese page) 
(in English) A broadband, single fundamental mixer is developed by using InP HEMT technology for use in precise spectrum analysis at frequencies above 110 GHz. The mixer has a duplexer at the drain terminal separating LO/RF signals from an IF signal and functions in both resistive and drain-LO-injection modes. In the drain-LO-injection mode, a conversion loss of 3 dB is measured on-chip. The drain-LO-injection mixer exhibits an IF bandwidth of more than 20 GHz on a wafer at an RF frequency of 116 GHz with an LO signal of 110 GHz and LO power of only 3 dBm. On the other hand, a conversion loss of 6.5 dB and an IF bandwidth of more than 30 GHz are measured on-chip in the resistive mode. The mixer chip is mounted in a module package, and we report on design and characterization of the mixer and module package. Our mixer module shows low conversion loss, wide bandwidth, and low LO power performance, thereby it is one of the best candidate for precise spectrum measurement or wireless communication systems.
Keyword (in Japanese) (See Japanese page) 
(in English) millimeter-wave / InP HEMT / fundamental mixer / resistive mixer / drain-LO-injection mixer / waveguide to microstrip transition / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 357, ED2013-93, pp. 19-23, Dec. 2013.
Paper # ED2013-93 
Date of Issue 2013-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-93

Conference Information
Committee ED  
Conference Date 2013-12-16 - 2013-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Research Institute of Electrical Communication Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2013-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis 
Sub Title (in English)  
Keyword(1) millimeter-wave  
Keyword(2) InP HEMT  
Keyword(3) fundamental mixer  
Keyword(4) resistive mixer  
Keyword(5) drain-LO-injection mixer  
Keyword(6) waveguide to microstrip transition  
Keyword(7)  
Keyword(8)  
1st Author's Name Shoichi Shiba  
1st Author's Affiliation Fujitsu Limited (Fujitsu)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Fujitsu Limited (Fujitsu)
3rd Author's Name Hiroshi Matsumura  
3rd Author's Affiliation Fujitsu Limited (Fujitsu)
4th Author's Name Tsuyoshi Takahashi  
4th Author's Affiliation Fujitsu Limited (Fujitsu)
5th Author's Name Toshihide Suzuki  
5th Author's Affiliation Fujitsu Limited (Fujitsu)
6th Author's Name Yasuhiro Nakasha  
6th Author's Affiliation Fujitsu Limited (Fujitsu)
7th Author's Name Naoki Hara  
7th Author's Affiliation Fujitsu Limited (Fujitsu)
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Speaker Author-1 
Date Time 2013-12-16 14:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-93 
Volume (vol) vol.113 
Number (no) no.357 
Page pp.19-23 
#Pages 5 
Date of Issue 2013-12-09 (ED) 

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