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Paper Abstract and Keywords
Presentation 2013-12-16 13:55
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92
Abstract (in Japanese) (See Japanese page) 
(in English) To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structures are used. In this work, we carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As HEMTs with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance gm_max and gate capacitance Cg increase with increasing the buried depth d. The extent of increase in the gm_max is more than that in the Cg. As a result, the cutoff frequency fT increases with the buried depth d. These phenomena agree with our previous experimental results. We also carried out MC simulation of the rectangular gate HEMTs. The increase of the gm_max with increasing d is almost same as that of the Cg. The increase of fT with increasing d was not observed in the MC simulations of the rectangular gate HEMT. Therefore, the head of the T-shaped gate plays a very important role in determining the trend of fT. Furthermore, we obtained electron velocity in the channel layer. The average electron velocity in the channel under the gate electrode increases with increasing d.
Keyword (in Japanese) (See Japanese page) 
(in English) HEMT / InGaAs / Monte Carlo simulation / Drain-source current / Transconductance / Gate capacitance / Cutoff frequency / Electron velocity  
Reference Info. IEICE Tech. Rep., vol. 113, no. 357, ED2013-92, pp. 13-17, Dec. 2013.
Paper # ED2013-92 
Date of Issue 2013-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2013-12-16 - 2013-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Research Institute of Electrical Communication Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2013-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate 
Sub Title (in English)  
Keyword(1) HEMT  
Keyword(2) InGaAs  
Keyword(3) Monte Carlo simulation  
Keyword(4) Drain-source current  
Keyword(5) Transconductance  
Keyword(6) Gate capacitance  
Keyword(7) Cutoff frequency  
Keyword(8) Electron velocity  
1st Author's Name Akira Endoh  
1st Author's Affiliation National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Akifumi Kasamatsu  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Takashi Mimura  
4th Author's Affiliation Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology (Fujitsu Labs./NICT)
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Speaker Author-1 
Date Time 2013-12-16 13:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-92 
Volume (vol) vol.113 
Number (no) no.357 
Page pp.13-17 
#Pages 5 
Date of Issue 2013-12-09 (ED) 

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