Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2013-12-16 17:25
1.89 THz Lasing at 160 K from THz-QCL with Indirect Injection Scheme
Miho Sasaki (RIKEN/Saitama Univ.), Tsung-Tse Lin (RIKEN), Hideki Hirayama (RIKEN/Saitama Univ.) ED2013-99
Abstract (in Japanese) (See Japanese page) 
(in English) Terahertz quantum cascade laser (THz-QCL) is expected as a compact terahertz laser light source which realizes high output power, quite narrow emission linewidth, and cw operation. However, the maximum operating temperature of THz-QCL ever reported is near the 200 K and room temperature operation has not yet been realized. The realization of higher temperature operation is more difficult particularly for the lower frequency (< 2 THz) THz-QCLs, due to the simultaneous electron injection into the upper and lower lasing levels by using a conventional resonant tunneling (RT) injection scheme. The purpose of this work is to realize higher temperature operation for lower frequency THz-QCLs. In order to obtain the selective electron injection into upper lasing level, we introduced as the THz-QCL design the indirect injection and the diagonal emission schemes. We have succeeded in surpassing the limit of the kBT line for a 1.89 THz QCL that operates up to 160 K (~1.8 &#1115;ω/kB). The obtained lasing operation was stable and the lasing frequency was not changed by the injection bias voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum cascade laser / Terahertz / Indirect injection scheme / LO-phonon scattering / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 357, ED2013-99, pp. 53-56, Dec. 2013.
Paper # ED2013-99 
Date of Issue 2013-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-99

Conference Information
Committee ED  
Conference Date 2013-12-16 - 2013-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Research Institute of Electrical Communication Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2013-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 1.89 THz Lasing at 160 K from THz-QCL with Indirect Injection Scheme 
Sub Title (in English)  
Keyword(1) Quantum cascade laser  
Keyword(2) Terahertz  
Keyword(3) Indirect injection scheme  
Keyword(4) LO-phonon scattering  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Miho Sasaki  
1st Author's Affiliation RIKEN/Saitama University (RIKEN/Saitama Univ.)
2nd Author's Name Tsung-Tse Lin  
2nd Author's Affiliation RIKEN (RIKEN)
3rd Author's Name Hideki Hirayama  
3rd Author's Affiliation RIKEN/Saitama University (RIKEN/Saitama Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2013-12-16 17:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-99 
Volume (vol) vol.113 
Number (no) no.357 
Page pp.53-56 
#Pages 4 
Date of Issue 2013-12-09 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan