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Paper Abstract and Keywords
Presentation 2014-01-28 15:00
[Poster Presentation] Control of ReRAM resistance
Tatsuya Fujii, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ) ICD2013-128
Abstract (in Japanese) (See Japanese page) 
(in English) ReRAM is being developed and considered as a next-generation non-volatile memory. It shows excellent performances such as scalability, switching speed, endurance, and data retention, etc. ReRAM becomes high/low resistance state when it is applied a voltage. For this property, it saves a data. However, the uniformity of the switching parameters has been the major challenge for the large-scale manufacturing. The physical origin is still not well understood so far. Therefore, it is difficult to control the resistance. In this paper, we aim to obtain new insights on this problem through experiment.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / non-volatile memory / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 419, ICD2013-128, pp. 65-65, Jan. 2014.
Paper # ICD2013-128 
Date of Issue 2014-01-21 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2013-128

Conference Information
Committee ICD  
Conference Date 2014-01-28 - 2014-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. Tokeidai Kinenkan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2014-01-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of ReRAM resistance 
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Keyword(1) ReRAM  
Keyword(2) non-volatile memory  
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1st Author's Name Tatsuya Fujii  
1st Author's Affiliation Chuo University (Chuo Univ)
2nd Author's Name Tomoko Ogura Iwasaki  
2nd Author's Affiliation Chuo University (Chuo Univ)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ)
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Speaker Author-1 
Date Time 2014-01-28 15:00:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # ICD2013-128 
Volume (vol) vol.113 
Number (no) no.419 
Page p.65 
#Pages 1 
Date of Issue 2014-01-21 (ICD) 

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