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| Presentation | 2014-02-28 09:00 Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE -- Analysis of Nitride Quantum Well Structures -- Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo)  ED2013-142 SDM2013-157 Link to ES Tech. Rep. Archives: ED2013-142 SDM2013-157 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor systems, GaN/AlN resonant tunneling diode (RTD) is expected to shows negative differential resistance with high peak valley ratio(PVR). On the other hand, the GaN/AlN interface obtained by metalorganic vapor phase epitaxy (MOVPE), which is a growth method compatible with mass production, cannot be accompanied by an abrupt atomic content profile, and thus the RTD fabricated by MOVPE may not perform as expected theoretically. We therefore investigated non-abruptness of the interfacial atomic content profile by observing the intersubband transition (ISBT) spectra for GaN/AlN quantum wells and analyzing them in terms of the numerical simulations of ISBT. An appropriate growth condition for the growth of RTD structures was obtained through the band-diagram calculation of the RTD structure taking such interface non-abruptness into account. Furthermore, RTD devices with GaN/AlN interfaces was fabricated by MOVPE, which successfully exhibited negative differential resistance (NDR). | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / subband / resonant tunneling diode / quantum well / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 449, ED2013-142, pp. 55-59, Feb. 2014. | |
| Paper # | ED2013-142 | |
| Date of Issue | 2014-02-20 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-142 SDM2013-157 Link to ES Tech. Rep. Archives: ED2013-142 SDM2013-157 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2014-02-27 - 2014-02-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. Centennial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2014-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE |
| Sub Title (in English) | Analysis of Nitride Quantum Well Structures |
| Keyword(1) | GaN |
| Keyword(2) | subband |
| Keyword(3) | resonant tunneling diode |
| Keyword(4) | quantum well |
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| Keyword(6) | |
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| 1st Author's Name | Naruaki Itoh |
| 1st Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Hassanet Sodabanlu |
| 2nd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name | Masakazu Sugiyama |
| 3rd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 4th Author's Name | Yoshiaki Nakano |
| 4th Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2014-02-28 09:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-142, SDM2013-157 |
| Volume (vol) | vol.113 |
| Number (no) | no.449(ED), no.450(SDM) |
| Page | pp.55-59 |
| #Pages | 5 |
| Date of Issue | 2014-02-20 (ED, SDM) |
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