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Paper Abstract and Keywords
Presentation 2014-05-29 10:00
Application to flame sensor of nitride-based hetero-field-effect-transistor-type ultraviolet photo detectors
Yuma Yamamoto, Takuya Murase, Mami Ishiguro, Tomoaki Yamada, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2014-34 CPM2014-17 SDM2014-32 Link to ES Tech. Rep. Archives: ED2014-34 CPM2014-17 SDM2014-32
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we fabricated high-performance AlGaN/AlN heterostructure-field effect-transistor-type (HFET-type) UV photosensor with a p-type GaN optical gate. As the result, the photosensitivity of this photosensor was over 10kA/W. Also, dark current density of the photosensor of approximately 12pA were obtained at operated voltage of 4 V. This photosensor detected the extremely weak flame under sunlight irradiation and room light.
Keyword (in Japanese) (See Japanese page) 
(in English) UV detector / flame sensor / solar blind / HFET / AlGaN / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 56, ED2014-34, pp. 81-84, May 2014.
Paper # ED2014-34 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-34 CPM2014-17 SDM2014-32 Link to ES Tech. Rep. Archives: ED2014-34 CPM2014-17 SDM2014-32

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Application to flame sensor of nitride-based hetero-field-effect-transistor-type ultraviolet photo detectors 
Sub Title (in English)  
Keyword(1) UV detector  
Keyword(2) flame sensor  
Keyword(3) solar blind  
Keyword(4) HFET  
Keyword(5) AlGaN  
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1st Author's Name Yuma Yamamoto  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Takuya Murase  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Mami Ishiguro  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Tomoaki Yamada  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name Motoaki Iwaya  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Satoshi Kamiyama  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Tetsuya Takeuchi  
7th Author's Affiliation Meijo University (Meijo Univ.)
8th Author's Name Isamu Akasaki  
8th Author's Affiliation Meijo University/Nagoya University (Meijo Univ./Nagoya Univ.)
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Speaker Author-1 
Date Time 2014-05-29 10:00:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2014-34, CPM2014-17, SDM2014-32 
Volume (vol) vol.114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.81-84 
#Pages
Date of Issue 2014-05-21 (ED, CPM, SDM) 


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