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Paper Abstract and Keywords
Presentation 2014-06-19 16:35
[Invited Lecture] Atomic switch-type resistive switching memory using oxide nanofilms and its applications
Tohru Tsuruoka, Tsuyoshi Hasegawa (NIMS) SDM2014-59
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the operation mechanism of atomic switch-type resistive change memories based on the transport of metal ions in oxide nanofilms and electrochemical reactions at metal/oxide interfaces. We proposed the switching mechanism of Cu,Ag/Ta2O5/Pt cells as a model system, and showed the validity of our model from temperature dependences of the switching behavior. The effect of moisture on the switching characteristics was also revealed. For future applications of the atomic switch, the conductance quantization, synaptic behavior, and three-terminal device called ‘atom transistor’ are demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) Atomic switch / Oxides / Ion transport / Quantized conductance / Synaptic plasticity / Atom transistor / Nanoionics /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 88, SDM2014-59, pp. 85-90, June 2014.
Paper # SDM2014-59 
Date of Issue 2014-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-59

Conference Information
Committee SDM  
Conference Date 2014-06-19 - 2014-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2014-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomic switch-type resistive switching memory using oxide nanofilms and its applications 
Sub Title (in English)  
Keyword(1) Atomic switch  
Keyword(2) Oxides  
Keyword(3) Ion transport  
Keyword(4) Quantized conductance  
Keyword(5) Synaptic plasticity  
Keyword(6) Atom transistor  
Keyword(7) Nanoionics  
Keyword(8)  
1st Author's Name Tohru Tsuruoka  
1st Author's Affiliation National Institute for Materials Science (NIMS)
2nd Author's Name Tsuyoshi Hasegawa  
2nd Author's Affiliation National Institute for Materials Science (NIMS)
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Speaker Author-1 
Date Time 2014-06-19 16:35:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2014-59 
Volume (vol) vol.114 
Number (no) no.88 
Page pp.85-90 
#Pages 6 
Date of Issue 2014-06-12 (SDM) 

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