Paper Abstract and Keywords |
Presentation |
2014-08-01 15:50
Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 Link to ES Tech. Rep. Archives: ED2014-60 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5±0.2 eV and 0.7±0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Au/Al2O3/n-Ga2O3 ("2" ̅01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium oxide / band alignment / x-ray photoelectron spectroscopy / tunneling current / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 168, ED2014-60, pp. 41-46, Aug. 2014. |
Paper # |
ED2014-60 |
Date of Issue |
2014-07-25 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2014-60 Link to ES Tech. Rep. Archives: ED2014-60 |
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