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Paper Abstract and Keywords
Presentation 2014-08-05 14:55
Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48 Link to ES Tech. Rep. Archives: SDM2014-79 ICD2014-48
Abstract (in Japanese) (See Japanese page) 
(in English) Reliability issues, such as plasma-induced damage (PID) and Bias Temperature
Instability (BTI), become dominant on integrated circuits. We measure
initial frequencies on ring oscillators with an antenna in
one stage in 65-nm bulk and SOTB (Silicon On Thin BOX) processes. Initial frequency variations
are converted to threshold voltage shifts. Impacts on initial
frequencies and threshold voltages by PID are evaluated. We show that PID can be relieved using the
drain-connection-structures in which an antenna is connected to drain
first or at the same time as a gate, but the amount of relaxation of
PID becomes small when an antenna has a big perimeter.
We also reveal that threshold voltage increases with antenna ratio in the
Keyword (in Japanese) (See Japanese page) 
(in English) plasma-induced damage / FD-SOI / BTI / ring oscillator / frequency / threshold voltage / reliabilty /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 175, ICD2014-48, pp. 93-98, Aug. 2014.
Paper # ICD2014-48 
Date of Issue 2014-07-28 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-79 ICD2014-48 Link to ES Tech. Rep. Archives: SDM2014-79 ICD2014-48

Conference Information
Committee ICD SDM  
Conference Date 2014-08-04 - 2014-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2014-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage 
Sub Title (in English)  
Keyword(1) plasma-induced damage  
Keyword(2) FD-SOI  
Keyword(3) BTI  
Keyword(4) ring oscillator  
Keyword(5) frequency  
Keyword(6) threshold voltage  
Keyword(7) reliabilty  
1st Author's Name Azusa Oshima  
1st Author's Affiliation Kyoto Institute of Technology (KIT)
2nd Author's Name Ryo Kishida  
2nd Author's Affiliation Kyoto Institute of Technology (KIT)
3rd Author's Name Michitarou Yabuuchi  
3rd Author's Affiliation Kyoto Institute of Technology (KIT)
4th Author's Name Kazutoshi Kobayashi  
4th Author's Affiliation Kyoto Institute of Technology (KIT)
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Date Time 2014-08-05 14:55:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2014-79, ICD2014-48 
Volume (vol) vol.114 
Number (no) no.174(SDM), no.175(ICD) 
Page pp.93-98 
Date of Issue 2014-07-28 (SDM, ICD) 

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