IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-08-05 14:55
Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48
Abstract (in Japanese) (See Japanese page) 
(in English) Reliability issues, such as plasma-induced damage (PID) and Bias Temperature
Instability (BTI), become dominant on integrated circuits. We measure
initial frequencies on ring oscillators with an antenna in
one stage in 65-nm bulk and SOTB (Silicon On Thin BOX) processes. Initial frequency variations
are converted to threshold voltage shifts. Impacts on initial
frequencies and threshold voltages by PID are evaluated. We show that PID can be relieved using the
drain-connection-structures in which an antenna is connected to drain
first or at the same time as a gate, but the amount of relaxation of
PID becomes small when an antenna has a big perimeter.
We also reveal that threshold voltage increases with antenna ratio in the
drain-connection-structures.
Keyword (in Japanese) (See Japanese page) 
(in English) plasma-induced damage / FD-SOI / BTI / ring oscillator / frequency / threshold voltage / reliabilty /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 175, ICD2014-48, pp. 93-98, Aug. 2014.
Paper # ICD2014-48 
Date of Issue 2014-07-28 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-79 ICD2014-48

Conference Information
Committee ICD SDM  
Conference Date 2014-08-04 - 2014-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2014-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage 
Sub Title (in English)  
Keyword(1) plasma-induced damage  
Keyword(2) FD-SOI  
Keyword(3) BTI  
Keyword(4) ring oscillator  
Keyword(5) frequency  
Keyword(6) threshold voltage  
Keyword(7) reliabilty  
Keyword(8)  
1st Author's Name Azusa Oshima  
1st Author's Affiliation Kyoto Institute of Technology (KIT)
2nd Author's Name Ryo Kishida  
2nd Author's Affiliation Kyoto Institute of Technology (KIT)
3rd Author's Name Michitarou Yabuuchi  
3rd Author's Affiliation Kyoto Institute of Technology (KIT)
4th Author's Name Kazutoshi Kobayashi  
4th Author's Affiliation Kyoto Institute of Technology (KIT)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2014-08-05 14:55:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2014-79, ICD2014-48 
Volume (vol) vol.114 
Number (no) no.174(SDM), no.175(ICD) 
Page pp.93-98 
#Pages 6 
Date of Issue 2014-07-28 (SDM, ICD) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan