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Paper Abstract and Keywords
Presentation 2014-11-07 10:50
Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104
Abstract (in Japanese) (See Japanese page) 
(in English) For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal stress on intrinsic point defect properties and behavior during single crystal growth from a melt. Very recently, first experimental evidence was published that the compressive thermal stress near the melt/solid interface makes a growing 300 mm diameter Czochralski Si crystal more vacancy-rich. In order to explain these experimental results quantitatively, the dependence of the formation enthalpies of the vacancy (V) and the self-interstitial (I) on compressive plane stress was determined using density functional theory (DFT) based calculations. It is found that compressive plane stress gives a higher stress dependence of the so-called “Voronkov criterion” compared to isotropic stress. The calculated plane stress dependence is in excellent agreement with the published experimental values and should be taken into account in the development of pulling processes for 450 mm diameter defect-free Si crystals. Also the mechanisms behind the experimentally observed impact of the type and concentration of substitutional dopants on intrinsic point defect behavior and formation of grown-in defects are clarified. On the basis of the DFT calculated results, an appropriate model of intrinsic point defect behavior in heavily doped Si is proposed. (1) The incorporated total V and I concentrations at the melting point depend on the types and concentrations of dopants. (2) Most of the total V and I concentrations contribute to Frenkel pair recombination during Si crystal growth at temperatures much higher than those to form grown-in intrinsic point defect clusters. The Voronkov model, while taking into account the present improvements, clearly explains all reported experimental results on grown-in defects for heavily doped Si.
Keyword (in Japanese) (See Japanese page) 
(in English) Single crystal Si / Intrinsic point defect / Thermal stress / Dopant / First principles calculation / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 291, SDM2014-104, pp. 47-52, Nov. 2014.
Paper # SDM2014-104 
Date of Issue 2014-10-30 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2014-11-06 - 2014-11-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2014-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon 
Sub Title (in English)  
Keyword(1) Single crystal Si  
Keyword(2) Intrinsic point defect  
Keyword(3) Thermal stress  
Keyword(4) Dopant  
Keyword(5) First principles calculation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Koji Sueoka  
1st Author's Affiliation Okayama Prefectural University (Okayama Pref. Univ.)
2nd Author's Name Eiji Kamiyama  
2nd Author's Affiliation Okayama Prefectural University (Okayama Pref. Univ.)
3rd Author's Name Kozo Nakamura  
3rd Author's Affiliation Okayama Prefectural University (Okayama Pref. Univ.)
4th Author's Name Jan Vanhellemont  
4th Author's Affiliation Ghent University (Ghent Univ.)
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Speaker Author-1 
Date Time 2014-11-07 10:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2014-104 
Volume (vol) vol.114 
Number (no) no.291 
Page pp.47-52 
#Pages 6 
Date of Issue 2014-10-30 (SDM) 

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