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Paper Abstract and Keywords
Presentation 2014-11-27 13:40
Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells
Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106
Abstract (in Japanese) (See Japanese page) 
(in English) Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-oriented-InGaN quantum wells (QWs) for active layers. Usually, these polarization properties are determined by the energy difference $Delta$textit{E} between the topmost two bands (A and B-bands) in the valence band. In this work, we performed polarization-photoluminescence (PL) measurement and polarization-photoluminescence excitation (PLE) measurement to estimate the $Delta$textit{E} value in m-plane InGaN QWs, and found that the $Delta$textit{E} value estimated from PL and PLE measurements are different. From a new theoretical model considering the effects of Indium compositional fluctuation, it is clarified the PLE measurements can always give accurate value of $Delta$textit{E}, while the PL measurements give wrong results affected by compositional fluctuation in active layers. Since most of reported data of $Delta$textit{E} were estimated by PL measurement, it is considered that they should be reexamined.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN-QWs / Polarization property / Valence band / Semipolar and Nonpolar substrate orientation / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 338, LQE2014-106, pp. 23-26, Nov. 2014.
Paper # LQE2014-106 
Date of Issue 2014-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-78 CPM2014-135 LQE2014-106

Conference Information
Committee LQE ED CPM  
Conference Date 2014-11-27 - 2014-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells 
Sub Title (in English)  
Keyword(1) InGaN-QWs  
Keyword(2) Polarization property  
Keyword(3) Valence band  
Keyword(4) Semipolar and Nonpolar substrate orientation  
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1st Author's Name Shigeta Sakai  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
2nd Author's Name Atsushi Yamaguchi  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
3rd Author's Name Kaori Kurihara  
3rd Author's Affiliation Mitsubishi Chemical Corporation (Mitsubishi Chemical)
4th Author's Name Satoru Nagao  
4th Author's Affiliation Mitsubishi Chemical Corporation (Mitsubishi Chemical)
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Speaker Author-1 
Date Time 2014-11-27 13:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2014-78, CPM2014-135, LQE2014-106 
Volume (vol) vol.114 
Number (no) no.336(ED), no.337(CPM), no.338(LQE) 
Page pp.23-26 
#Pages 4 
Date of Issue 2014-11-20 (ED, CPM, LQE) 

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