Paper Abstract and Keywords |
Presentation |
2014-12-22 15:00
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 Link to ES Tech. Rep. Archives: ED2014-102 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be reduced to suppress the short-channel effects. The buried gate structures are one of the most effective methods to reduce the gate-channel distance d. There are mainly two methods to reduce d: one is the recessed-gate technology and another is the gate metal sinking process. In these techniques, the fabricated gate foot is not rectangular, i.e. the tip of the gate electrode is “round.” We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMTs with a “realistic” buried gate in which the tip of the gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown. The cutoff frequency fT increases with decreasing the “effective” gate length. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
HEMTs / Monte Carlo simulation / Buried gate / Electron velocity / Electric field / Short-channel effects / Effective gate length / Cutoff frequency |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 387, ED2014-102, pp. 21-26, Dec. 2014. |
Paper # |
ED2014-102 |
Date of Issue |
2014-12-15 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2014-102 Link to ES Tech. Rep. Archives: ED2014-102 |