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| Presentation | 2014-12-22 14:35 Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.)  ED2014-101 Link to ES Tech. Rep. Archives: ED2014-101 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ultra-high-speed wireless communications but also expansion of radio spectrum resources in millimeter- (30-300 GHz) and sub-millimeter-wave (300 GHz-3 THz) frequency bands; this is because these HEMTs can demonstrate a high current-gain cutoff frequency (fT) and a low minimum noise figure (NFmin). In this contribution, we measured output power performance of the 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As HEMT with 520-GHz-fT and 0.8-dB-NFmin at 90-GHz band, and we also investigated the Lg dependence on output power characteritics of the HEMTs.We achieved a high maximum gain (Ga_max) of 9.9 dB and a saturation power (Psat) of 9.6 dBm (= 9.1 mW) at a frequency of 90 GHz. As Lg increased from 35 to 95 nm, Ga_max decreased to 7.8 dB and Psat increased to 10.8 dBm. Maximum power added efficiency (PAE) was 29.6% when the Lg was 50 nm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs/InAlAs HEMT / output power performance / saturation power / power added efficiency (PAE) / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 387, ED2014-101, pp. 15-19, Dec. 2014. | |
| Paper # | ED2014-101 | |
| Date of Issue | 2014-12-15 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-101 Link to ES Tech. Rep. Archives: ED2014-101 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2014-12-22 - 2014-12-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2014-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Output power performance of InGaAs/InAlAs HEMT at 90-GHz band |
| Sub Title (in English) | |
| Keyword(1) | InGaAs/InAlAs HEMT |
| Keyword(2) | output power performance |
| Keyword(3) | saturation power |
| Keyword(4) | power added efficiency (PAE) |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Issei Watanabe |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 2nd Author's Name | Akira Endoh |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Lab. Ltd. (NICT/Fujistu Lab.) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Info. & Com. Tech. (NICT) |
| 4th Author's Name | Takashi Mimura |
| 4th Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Lab. Ltd. (NICT/Fujistu Lab.) |
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| Speaker | Author-1 |
| Date Time | 2014-12-22 14:35:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2014-101 |
| Volume (vol) | vol.114 |
| Number (no) | no.387 |
| Page | pp.15-19 |
| #Pages | 5 |
| Date of Issue | 2014-12-15 (ED) |
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