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Paper Abstract and Keywords
Presentation 2014-12-22 14:35
Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101
Abstract (in Japanese) (See Japanese page) 
(in English) InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ultra-high-speed wireless communications but also expansion of radio spectrum resources in millimeter- (30-300 GHz) and sub-millimeter-wave (300 GHz-3 THz) frequency bands; this is because these HEMTs can demonstrate a high current-gain cutoff frequency (fT) and a low minimum noise figure (NFmin). In this contribution, we measured output power performance of the 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As HEMT with 520-GHz-fT and 0.8-dB-NFmin at 90-GHz band, and we also investigated the Lg dependence on output power characteritics of the HEMTs.We achieved a high maximum gain (Ga_max) of 9.9 dB and a saturation power (Psat) of 9.6 dBm (= 9.1 mW) at a frequency of 90 GHz. As Lg increased from 35 to 95 nm, Ga_max decreased to 7.8 dB and Psat increased to 10.8 dBm. Maximum power added efficiency (PAE) was 29.6% when the Lg was 50 nm.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs/InAlAs HEMT / output power performance / saturation power / power added efficiency (PAE) / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 387, ED2014-101, pp. 15-19, Dec. 2014.
Paper # ED2014-101 
Date of Issue 2014-12-15 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2014-12-22 - 2014-12-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Output power performance of InGaAs/InAlAs HEMT at 90-GHz band 
Sub Title (in English)  
Keyword(1) InGaAs/InAlAs HEMT  
Keyword(2) output power performance  
Keyword(3) saturation power  
Keyword(4) power added efficiency (PAE)  
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1st Author's Name Issei Watanabe  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Akira Endoh  
2nd Author's Affiliation National Institute of Information and Communications Technology/Fujitsu Lab. Ltd. (NICT/Fujistu Lab.)
3rd Author's Name Akifumi Kasamatsu  
3rd Author's Affiliation National Institute of Info. & Com. Tech. (NICT)
4th Author's Name Takashi Mimura  
4th Author's Affiliation National Institute of Information and Communications Technology/Fujitsu Lab. Ltd. (NICT/Fujistu Lab.)
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Speaker Author-1 
Date Time 2014-12-22 14:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-101 
Volume (vol) vol.114 
Number (no) no.387 
Page pp.15-19 
#Pages 5 
Date of Issue 2014-12-15 (ED) 

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