Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-12-23 10:05
Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors
Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.) ED2014-109
Abstract (in Japanese) (See Japanese page) 
(in English) We compare the measured broadband characteristics of the responsivity of asymmetric dual-grating-gate high-electron-mobility transistors in the terahertz range and theoretically predicted characteristics. Using the hydrodynamic model, we show that the plasmonic drag and ratchet effects originating from hydrodynamic nonlinearities of plasmons take place due to the asymmetric placement of the grating gates, and we derive the analytical expressions of DC photocurrents generated by these effects. We show that the photocurrent due to the plasmonic drag effect is dominant in the low-frequency range, whereas the photocurrent due to the plasmonic ratchet effect is dominant in the high-frequency range. We demonstrate that the measured broadband characteristic of the responsivity agrees well with the theory.
Keyword (in Japanese) (See Japanese page) 
(in English) HEMT / plasmon / THz detection / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 387, ED2014-109, pp. 63-67, Dec. 2014.
Paper # ED2014-109 
Date of Issue 2014-12-15 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-109

Conference Information
Committee ED  
Conference Date 2014-12-22 - 2014-12-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors 
Sub Title (in English)  
Keyword(1) HEMT  
Keyword(2) plasmon  
Keyword(3) THz detection  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Akira Satou  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Stephane Bobanga Tombet  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Takayuki Watanabe  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Tetsuya Kawasaki  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tetsuya Suemitsu  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Denis V Fateev  
6th Author's Affiliation Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch) (IREE)
7th Author's Name Vyacheslav V Popov  
7th Author's Affiliation Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch) (IREE)
8th Author's Name Hiroaki Minamide  
8th Author's Affiliation RIKEN (RIKEN)
9th Author's Name Hiromasa Ito  
9th Author's Affiliation RIKEN (RIKEN)
10th Author's Name Dominique Coquillat  
10th Author's Affiliation Universite Montpellier 2 (Univ. Montpellier 2)
11th Author's Name Wojciech Knap  
11th Author's Affiliation Universite Montpellier 2 (Univ. Montpellier 2)
12th Author's Name Guillaume Ducournau  
12th Author's Affiliation Institut d'Electronique, de Microelectronique et de Nanotechnologie (IEMN)
13th Author's Name Taiichi Otsuji  
13th Author's Affiliation Tohoku University (Tohoku Univ.)
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2014-12-23 10:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-109 
Volume (vol) vol.114 
Number (no) no.387 
Page pp.63-67 
#Pages 5 
Date of Issue 2014-12-15 (ED) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan