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Paper Abstract and Keywords
Presentation 2015-01-16 11:30
Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurement and TCAD simulation. The two type devices which differ only in the concentration of Fe at GaN buffer layer was prepared, and the transient response from OFF state to ON state was measured at various temperature. Trap energy and capture cross-section at GaN buffer layer were extracted by analysis of time constant of traps. And, by using TCAD simulation and these trap parameters, the relationship with traps at GaN buffer layer and transient response was analyzed. In the result, it was found that transient current was increased because electrons which were captured in traps at GaN buffer at OFF state were emitted at ON state, and transient drain current was increased.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / HEMT / trap / transient response / TCAD / Fe / buffer /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 391, ED2014-129, pp. 71-76, Jan. 2015.
Paper # ED2014-129 
Date of Issue 2015-01-08 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-129 MW2014-193

Conference Information
Committee MW ED  
Conference Date 2015-01-15 - 2015-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2015-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) HEMT  
Keyword(3) trap  
Keyword(4) transient response  
Keyword(5) TCAD  
Keyword(6) Fe  
Keyword(7) buffer  
Keyword(8)  
1st Author's Name Yutaro Yamaguchi  
1st Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
2nd Author's Name Takuma Nanjo  
2nd Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
3rd Author's Name Hidetoshi Koyama  
3rd Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
4th Author's Name Yoshitaka Kamo  
4th Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
5th Author's Name Koji Yamanaka  
5th Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
6th Author's Name Toshiyuki Oishi  
6th Author's Affiliation Saga University (Saga Univ.)
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Speaker Author-1 
Date Time 2015-01-16 11:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-129, MW2014-193 
Volume (vol) vol.114 
Number (no) no.391(ED), no.392(MW) 
Page pp.71-76 
#Pages 6 
Date of Issue 2015-01-08 (ED, MW) 

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