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| Presentation | 2015-01-16 09:35 A 10 MHz to 12 GHz Low-Distortion High-Speed SP4T Switch for RF ATE Using TaON Passivation GaN HEMTs Masayuki Kimishima, Satosi Koyama, Masao Onishi (Advantest Lab,)  ED2014-125 MW2014-189 Link to ES Tech. Rep. Archives: ED2014-125 MW2014-189 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A 10 MHz – 12 GHz low distortion high speed single pole 4 throw (SP4T) GaN HEMT switch for RF Automated Test Equipment (ATE) is described. The switch is fabricated with the Schottky GaN HEMT process with drastically decreased gate leakage current having tantalum oxynitride (TaON) passivation films to improve distortion performances at low frequency. The switch has high input 3rd order intercept point (IP3) of more than 52 dBm across a frequency range of 10 MHz to 12 GHz and fast settling time of less than 10 μs to within 0.01 dB. In addition, a drastic low damage passivation deposition technology can execute very high speed switching performance. An on-chip decode logic with TTL level input for the state control is also integrated. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN HEMT / gate leakage current / RF switch / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 392, MW2014-189, pp. 47-51, Jan. 2015. | |
| Paper # | MW2014-189 | |
| Date of Issue | 2015-01-08 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-125 MW2014-189 Link to ES Tech. Rep. Archives: ED2014-125 MW2014-189 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2015-01-15 - 2015-01-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2015-01-MW-ED |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 10 MHz to 12 GHz Low-Distortion High-Speed SP4T Switch for RF ATE Using TaON Passivation GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | gate leakage current |
| Keyword(3) | RF switch |
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| 1st Author's Name | Masayuki Kimishima |
| 1st Author's Affiliation | Advantest Laboratories (Advantest Lab,) |
| 2nd Author's Name | Satosi Koyama |
| 2nd Author's Affiliation | Advantest Laboratories (Advantest Lab,) |
| 3rd Author's Name | Masao Onishi |
| 3rd Author's Affiliation | Advantest Laboratories (Advantest Lab,) |
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| Speaker | Author-1 |
| Date Time | 2015-01-16 09:35:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2014-125, MW2014-189 |
| Volume (vol) | vol.114 |
| Number (no) | no.391(ED), no.392(MW) |
| Page | pp.47-51 |
| #Pages | 5 |
| Date of Issue | 2015-01-08 (ED, MW) |
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