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Paper Abstract and Keywords
Presentation 2015-01-23 09:00
Magnetic-Field Sensor using Poly-Si Hall Device -- Sensitivity Improved by High Voltage Application and OpAmp Circuits --
Akito Yoshikawa, Takaaki Matsumoto, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUOJ) EID2014-47
Abstract (in Japanese) (See Japanese page) 
(in English) We are executing research and development of magnetic field sensors using poly-Si Hall devices. In this study, in order to improve the sensitivity, we applied a high voltage of 580V to a Hall device and obtained the maximum sensitivity of 5.13V/T. Moreover, we evaluated open loop gain of an operational amplifier using poly-Si TFTs. In a poly-Si TFT Hall device equipped with the operational amplifier circuit, we applied only a low voltage of 10V to the poly-Si TFT Hall device but obtained a large sensitivity of 1.71 V/T by amplification using the operational amplifier circuit. These experimental results show that poly-Si Hall devices can be utilized to measure the magnetic-flux density and there is a possibility that they can be applied to magnetic-field area sensors.
Keyword (in Japanese) (See Japanese page) 
(in English) Poly-Si / Hall device / Magnetic field sensor / High voltage / Operational amplifier circuit / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 407, EID2014-47, pp. 49-52, Jan. 2015.
Paper # EID2014-47 
Date of Issue 2015-01-15 (EID) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EID ITE-IDY IEIJ-SSL IEE-EDD SID-JC  
Conference Date 2015-01-22 - 2015-01-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Ryukoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EID 
Conference Code 2015-01-EID-IDY-SSL-EDD-JC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Magnetic-Field Sensor using Poly-Si Hall Device 
Sub Title (in English) Sensitivity Improved by High Voltage Application and OpAmp Circuits 
Keyword(1) Poly-Si  
Keyword(2) Hall device  
Keyword(3) Magnetic field sensor  
Keyword(4) High voltage  
Keyword(5) Operational amplifier circuit  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Akito Yoshikawa  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Takaaki Matsumoto  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Shougo Miyamura  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Haruki Shiga  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
5th Author's Name Tokiyoshi Matsuda  
5th Author's Affiliation Ryukoku University (Ryukoku Univ.)
6th Author's Name Mutsumi Kimura  
6th Author's Affiliation Ryukoku University (Ryukoku Univ.)
7th Author's Name Tokuro Ozawa  
7th Author's Affiliation R&D Department,AU Optronics CorporationJapan (AUOJ)
8th Author's Name Koji Aoki  
8th Author's Affiliation R&D Department,AU Optronics CorporationJapan (AUOJ)
9th Author's Name Chih-Che Kuo  
9th Author's Affiliation R&D Department,AU Optronics CorporationJapan (AUOJ)
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Speaker Author-1 
Date Time 2015-01-23 09:00:00 
Presentation Time 8 minutes 
Registration for EID 
Paper # EID2014-47 
Volume (vol) vol.114 
Number (no) no.407 
Page pp.49-52 
#Pages 4 
Date of Issue 2015-01-15 (EID) 

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