IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2015-01-27 10:50
[Invited Talk] High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs -- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties --
Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) SDM2014-137 Link to ES Tech. Rep. Archives: SDM2014-137
Abstract (in Japanese) (See Japanese page) 
(in English) High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, Eg.eff. Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement. The fabricated Ge/sSOI(1.1 %) tunnel FETs show high Ion/Ioff ratio over 107 and steep minimum SS of 28 mV/dec. Back biasing effects are also investigated and the Ion and average SS are improved by positive back biasing.
Keyword (in Japanese) (See Japanese page) 
(in English) Tunnel FET / Strained Si / Ge-source / MOS interface / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 421, SDM2014-137, pp. 9-12, Jan. 2015.
Paper # SDM2014-137 
Date of Issue 2015-01-20 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-137 Link to ES Tech. Rep. Archives: SDM2014-137

Conference Information
Committee SDM  
Conference Date 2015-01-27 - 2015-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2015-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs 
Sub Title (in English) Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties 
Keyword(1) Tunnel FET  
Keyword(2) Strained Si  
Keyword(3) Ge-source  
Keyword(4) MOS interface  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Minsoo Kim  
1st Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
2nd Author's Name Yuki K. Wakabayashi  
2nd Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
3rd Author's Name Ryosho Nakane  
3rd Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
4th Author's Name Masafumi Yokoyama  
4th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
5th Author's Name Mitsuru Takenaka  
5th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
6th Author's Name Shinichi Takagi  
6th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2015-01-27 10:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2014-137 
Volume (vol) vol.114 
Number (no) no.421 
Page pp.9-12 
#Pages
Date of Issue 2015-01-20 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan