Paper Abstract and Keywords |
Presentation |
2015-01-27 10:50
[Invited Talk]
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs
-- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties -- Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) SDM2014-137 Link to ES Tech. Rep. Archives: SDM2014-137 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, Eg.eff. Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement. The fabricated Ge/sSOI(1.1 %) tunnel FETs show high Ion/Ioff ratio over 107 and steep minimum SS of 28 mV/dec. Back biasing effects are also investigated and the Ion and average SS are improved by positive back biasing. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Tunnel FET / Strained Si / Ge-source / MOS interface / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 421, SDM2014-137, pp. 9-12, Jan. 2015. |
Paper # |
SDM2014-137 |
Date of Issue |
2015-01-20 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2014-137 Link to ES Tech. Rep. Archives: SDM2014-137 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-01-27 - 2015-01-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2015-01-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs |
Sub Title (in English) |
Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties |
Keyword(1) |
Tunnel FET |
Keyword(2) |
Strained Si |
Keyword(3) |
Ge-source |
Keyword(4) |
MOS interface |
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1st Author's Name |
Minsoo Kim |
1st Author's Affiliation |
The University of Tokyo (The Univ. of Tokyo) |
2nd Author's Name |
Yuki K. Wakabayashi |
2nd Author's Affiliation |
The University of Tokyo (The Univ. of Tokyo) |
3rd Author's Name |
Ryosho Nakane |
3rd Author's Affiliation |
The University of Tokyo (The Univ. of Tokyo) |
4th Author's Name |
Masafumi Yokoyama |
4th Author's Affiliation |
The University of Tokyo (The Univ. of Tokyo) |
5th Author's Name |
Mitsuru Takenaka |
5th Author's Affiliation |
The University of Tokyo (The Univ. of Tokyo) |
6th Author's Name |
Shinichi Takagi |
6th Author's Affiliation |
The University of Tokyo (The Univ. of Tokyo) |
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Speaker |
Author-1 |
Date Time |
2015-01-27 10:50:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2014-137 |
Volume (vol) |
vol.114 |
Number (no) |
no.421 |
Page |
pp.9-12 |
#Pages |
4 |
Date of Issue |
2015-01-20 (SDM) |