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| Presentation | 2015-01-27 15:30 [Invited Talk] Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST)  SDM2014-143 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k gate stacks have been thoroughly investigated and compared with conventional FinFETs. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of Vth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that, by applying a positive bias to the n+-drain (normal operation condition), the PBTI lifetime is dramatically improved as compared with that in the conventional stress test (both the p+-source and n+-drain are grounded). This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, the realistic impact of the PBTI is significantly mitigated for n-type TFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | N-Type Tunnel FinFETs / Threshold Voltage / PBTI / Lifetime Prediction / Activation Energy / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 421, SDM2014-143, pp. 33-36, Jan. 2015. | |
| Paper # | SDM2014-143 | |
| Date of Issue | 2015-01-20 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2014-143 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2015-01-27 - 2015-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs |
| Sub Title (in English) | |
| Keyword(1) | N-Type Tunnel FinFETs |
| Keyword(2) | Threshold Voltage |
| Keyword(3) | PBTI |
| Keyword(4) | Lifetime Prediction |
| Keyword(5) | Activation Energy |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Wataru Mizubayashi |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Takahiro Mori |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Koichi Fukuda |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Yongxun Liu |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Takashi Matsukawa |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Yuki Ishikawa |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 7th Author's Name | Kazuhiko Endo |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 8th Author's Name | Shinichi Ohuchi |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 9th Author's Name | Junichi Tsukada |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 10th Author's Name | Hiromi Yamauchi |
| 10th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 11th Author's Name | Yukinori Morita |
| 11th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 12th Author's Name | Shinji Migita |
| 12th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 13th Author's Name | Hiroyuki Ota |
| 13th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 14th Author's Name | Meishoku Masahara |
| 14th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| Speaker | Author-1 |
| Date Time | 2015-01-27 15:30:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2014-143 |
| Volume (vol) | vol.114 |
| Number (no) | no.421 |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2015-01-20 (SDM) |
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