Paper Abstract and Keywords |
Presentation |
2015-05-29 09:55
Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32 Link to ES Tech. Rep. Archives: ED2015-30 CPM2015-15 SDM2015-32 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parameter for SiC bipolar devices. In this study, we focus on the temperature dependence of the surface recombination velocity, and evaluated it quantitatively by microwave photoconductivity decay measurements and numerical analysis. As a result, we found that the temperature dependence of the surface recombination velocities for 4H-SiC is weak, and thus the surface recombination velocities are almost the same values as that at room temperature to 250C. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / Carrier lifetime / Surface recombination / μ-PCD / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 63, ED2015-30, pp. 71-76, May 2015. |
Paper # |
ED2015-30 |
Date of Issue |
2015-05-21 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2015-30 CPM2015-15 SDM2015-32 Link to ES Tech. Rep. Archives: ED2015-30 CPM2015-15 SDM2015-32 |
Conference Information |
Committee |
ED CPM SDM |
Conference Date |
2015-05-28 - 2015-05-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Venture Business Laboratory, Toyohashi University of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
crystal growth、devices characterization , etc. |
Paper Information |
Registration To |
ED |
Conference Code |
2015-05-ED-CPM-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC |
Sub Title (in English) |
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Keyword(1) |
4H-SiC |
Keyword(2) |
Carrier lifetime |
Keyword(3) |
Surface recombination |
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μ-PCD |
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1st Author's Name |
Kimihiro Kohama |
1st Author's Affiliation |
Nagoya institute of technology (NIT) |
2nd Author's Name |
Yuto Mori |
2nd Author's Affiliation |
Nagoya institute of technology (NIT) |
3rd Author's Name |
Masashi Kato |
3rd Author's Affiliation |
Nagoya institute of technology (NIT) |
4th Author's Name |
Masaya Ichimura |
4th Author's Affiliation |
Nagoya institute of technology (NIT) |
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Speaker |
Author-1 |
Date Time |
2015-05-29 09:55:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2015-30, CPM2015-15, SDM2015-32 |
Volume (vol) |
vol.115 |
Number (no) |
no.63(ED), no.64(CPM), no.65(SDM) |
Page |
pp.71-76 |
#Pages |
6 |
Date of Issue |
2015-05-21 (ED, CPM, SDM) |
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