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Paper Abstract and Keywords
Presentation 2015-05-29 09:55
Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32 Link to ES Tech. Rep. Archives: ED2015-30 CPM2015-15 SDM2015-32
Abstract (in Japanese) (See Japanese page) 
(in English) The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parameter for SiC bipolar devices. In this study, we focus on the temperature dependence of the surface recombination velocity, and evaluated it quantitatively by microwave photoconductivity decay measurements and numerical analysis. As a result, we found that the temperature dependence of the surface recombination velocities for 4H-SiC is weak, and thus the surface recombination velocities are almost the same values as that at room temperature to 250C.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / Carrier lifetime / Surface recombination / μ-PCD / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 63, ED2015-30, pp. 71-76, May 2015.
Paper # ED2015-30 
Date of Issue 2015-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-30 CPM2015-15 SDM2015-32 Link to ES Tech. Rep. Archives: ED2015-30 CPM2015-15 SDM2015-32

Conference Information
Committee ED CPM SDM  
Conference Date 2015-05-28 - 2015-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Venture Business Laboratory, Toyohashi University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) crystal growth、devices characterization , etc. 
Paper Information
Registration To ED 
Conference Code 2015-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) Carrier lifetime  
Keyword(3) Surface recombination  
Keyword(4) μ-PCD  
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1st Author's Name Kimihiro Kohama  
1st Author's Affiliation Nagoya institute of technology (NIT)
2nd Author's Name Yuto Mori  
2nd Author's Affiliation Nagoya institute of technology (NIT)
3rd Author's Name Masashi Kato  
3rd Author's Affiliation Nagoya institute of technology (NIT)
4th Author's Name Masaya Ichimura  
4th Author's Affiliation Nagoya institute of technology (NIT)
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Speaker Author-1 
Date Time 2015-05-29 09:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-30, CPM2015-15, SDM2015-32 
Volume (vol) vol.115 
Number (no) no.63(ED), no.64(CPM), no.65(SDM) 
Page pp.71-76 
#Pages
Date of Issue 2015-05-21 (ED, CPM, SDM) 


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