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Paper Abstract and Keywords
Presentation 2015-06-19 14:55
Effect of annealing on defects in Ge1-xSnx epitaxial layers
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50
Abstract (in Japanese) (See Japanese page) 
(in English) In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control defects in Ge1-xSnx, which form an acceptor-like state in the forbidden band. We examined the fabrication and the electric measurements of Al/Al2O3/GeO2/Ge1-xSnx/p-Ge(001) MOS capacitors, and investigated in detail the influence of the Sn content, and temperature and ambient of post deposition annealing (PDA) on the annihilation and formation of defects in Ge1-xSnx epitaxial layers. The acceptor density can be reduced by increasing the PDA temperature, which does not cause the introduction of dislocations in Ge1-xSnx layer. Also, the energy of the defect state decreases after PDA only for a high-Sn-content Ge1-xSnx, indicating the formation of Sn-related defects by PDA.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge1-xSnx / epitaxial growth / defects / electrical property / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-50, pp. 63-68, June 2015.
Paper # SDM2015-50 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of annealing on defects in Ge1-xSnx epitaxial layers 
Sub Title (in English)  
Keyword(1) Ge1-xSnx  
Keyword(2) epitaxial growth  
Keyword(3) defects  
Keyword(4) electrical property  
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1st Author's Name Takanori Asano  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Shigehisa Shibayama  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Wakana Takeuchi  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Mitsuo Sakashita  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Osamu Nakatsuka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Shigeaki Zaima  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2015-06-19 14:55:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-50 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.63-68 
#Pages 6 
Date of Issue 2015-06-12 (SDM) 

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