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Paper Abstract and Keywords
Presentation 2015-06-19 10:10
[Invited Lecture] Al2O3/Ga2O3 interface structure and its surface orientation dependence
Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40
Abstract (in Japanese) (See Japanese page) 
(in English) The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C-V method; they showed Dit of 5×1010–9×1011 cm-2eV-1, 2×1010–2×1011 cm-2eV-1, respectively, in energy rage of E - EC = -0.8–-0.1 eV. The Dit of Al2O3/n-Ga2O3 (010) was lower than that of Al2O3/n-Ga2O3 ("2" ̅01). In the structural observation by cross-sectional TEM, a uniform amorphous Al2O3 layer was observed on the Ga2O3 ("2" ̅01) substrate. On the other hand, a crystalline Al2O3 layer with a thickness of 3.2±0.7 nm was formed between the Ga2O3 (010) substrate and an amorphous Al2O3 top layer, and the crystalline layer effectively suppresses the Dit. Moreover, on the n-Ga2O3 (010) substrate, the Dit decreased with increasing a deposition temperature of Al2O3 layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium Oxide / Interface state density / Atomic layer deposition / MOS / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-40, pp. 11-16, June 2015.
Paper # SDM2015-40 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Al2O3/Ga2O3 interface structure and its surface orientation dependence 
Sub Title (in English)  
Keyword(1) Gallium Oxide  
Keyword(2) Interface state density  
Keyword(3) Atomic layer deposition  
Keyword(4) MOS  
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1st Author's Name Takafumi Kamimura  
1st Author's Affiliation The National Institute of Information and Communications Technology (NICT)
2nd Author's Name Daivasigamani Krishnamurthy  
2nd Author's Affiliation The National Institute of Information and Communications Technology (NICT)
3rd Author's Name Akito Kuramata  
3rd Author's Affiliation Tamura Corporation (Tamura Corp.)
4th Author's Name Shigenobu Yamakoshi  
4th Author's Affiliation Tamura corporation (Tamura Corp.)
5th Author's Name Masataka Higashiwaki  
5th Author's Affiliation The National Institute of Information and Communications Technology (NICT)
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Speaker Author-1 
Date Time 2015-06-19 10:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-40 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.11-16 
#Pages 6 
Date of Issue 2015-06-12 (SDM) 

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