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Paper Abstract and Keywords
Presentation 2015-08-04 12:20
Electrochemical formation and UV photoresponse properties of GaN porous structures
Hirofumi Kida, Yusuke Kumazaki, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-53
Abstract (in Japanese) (See Japanese page) 
(in English) Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and spectroscopic photoabsorption under monochromatic light with various wavelengths. The measured photocurrents on the porous GaN electrode were larger than those on the planar electrodes due to the unique features of the former electrode, such as large surface area and low photoreflectance properties. Moreover, the photocurrents were observed even under illumination with wavelength of 380 nm, corresponding to photon energy of 3.26 eV, which is 130 meV lower than the bandgap energy of bulk GaN. The observed redshift of the photoabsorption edge can be qualitatively explained by the Franz-Keldysh effect.
Keyword (in Japanese) (See Japanese page) 
(in English) porous structure / gallium nitride / photocurrents / redshift of bandedge photoabsorption / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 170, ED2015-53, pp. 51-54, Aug. 2015.
Paper # ED2015-53 
Date of Issue 2015-07-27 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-53

Conference Information
Committee ED  
Conference Date 2015-08-03 - 2015-08-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sensor device, MEMS, etc 
Paper Information
Registration To ED 
Conference Code 2015-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrochemical formation and UV photoresponse properties of GaN porous structures 
Sub Title (in English)  
Keyword(1) porous structure  
Keyword(2) gallium nitride  
Keyword(3) photocurrents  
Keyword(4) redshift of bandedge photoabsorption  
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1st Author's Name Hirofumi Kida  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Yusuke Kumazaki  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Zenji Yatabe  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Taketomo Sato  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2015-08-04 12:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-53 
Volume (vol) vol.115 
Number (no) no.170 
Page pp.51-54 
#Pages 4 
Date of Issue 2015-07-27 (ED) 

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