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Paper Abstract and Keywords
Presentation 2015-08-27 10:35
Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric
Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31
Abstract (in Japanese) (See Japanese page) 
(in English) Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field-effect mobility (μFE) in spite of low-temperature fabrication process. These characteristics are suitable for application of flexible display. To achieve high performance and good reliability, conventional TFTs needs high temperature process. In this study, we demonstrate IGZO-TFTs with Ionic liquid dielectric with low temperature process, high carrier accumulation and low operation voltage. The TFTs show significantly low operation voltage, S.S value, and moreover they are stable for long-term voltage stress. This device shows original degradation mechanism other than conventional deterioration.
Keyword (in Japanese) (See Japanese page) 
(in English) Flexible display / a-InGaZnO(a-IGZO) / Thin film transistors(TFTs) / Gate dielectric / Ionic liquid / Ion gel / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 194, R2015-23, pp. 5-8, Aug. 2015.
Paper # R2015-23 
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31

Conference Information
Committee CPM OPE LQE R EMD  
Conference Date 2015-08-27 - 2015-08-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Aomori-Bussankan-Asupamu 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To R 
Conference Code 2015-08-CPM-OPE-LQE-R-EMD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric 
Sub Title (in English)  
Keyword(1) Flexible display  
Keyword(2) a-InGaZnO(a-IGZO)  
Keyword(3) Thin film transistors(TFTs)  
Keyword(4) Gate dielectric  
Keyword(5) Ionic liquid  
Keyword(6) Ion gel  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiromi Okada  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Mami Fujii  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Yasuaki Ishikawa  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Kazumoto Miwa  
4th Author's Affiliation Central Research Institute of Electric Power Industry (CRIEPI)
5th Author's Name Yukiharu Uraoka  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Shimpei Ono  
6th Author's Affiliation Central Research Institute of Electric Power Industry (CRIEPI)
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Speaker Author-1 
Date Time 2015-08-27 10:35:00 
Presentation Time 25 minutes 
Registration for R 
Paper # R2015-23, EMD2015-31, CPM2015-47, OPE2015-62, LQE2015-31 
Volume (vol) vol.115 
Number (no) no.194(R), no.195(EMD), no.196(CPM), no.197(OPE), no.198(LQE) 
Page pp.5-8 
#Pages 4 
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE) 

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