Paper Abstract and Keywords |
Presentation |
2015-09-03 15:20
Growth of c-axis parallel oriented ZnO film by RF magnetron sputtering at low gas pressure and its application in SAW and Lamb wave devices Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Waseda Univ.), Jean-Claude Gerbedoen, Abdelkrim Talbi (IEMN), Mami Matsukawa (Doshisha Univ.), Philippe Pernod (IEMN) US2015-50 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO piezoelectric films are widely used for acoustic wave devices. In most cases the (0001) oriented ZnO films were used. On the other hand, c-axis parallel oriented ZnO films have unique anisotropy of elastic properties enabling to generate acoustic waves with high electromechanical coupling coefficient K2. We demonstrated c-axis parallel oriented ZnO film growth by RF magnetron sputtering at low gas pressure. In theoretical analyses, values of K2, up to 3.8% for sezawa mode SAW and up to 10.5% for the first symmetrical Lamb wave mode, can be achieved with this film. Then, we fabricated SAW and Lamb wave devices, and measure the insertion loss characteristics. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO film / c-Axis parallel oriented film / Sputtering method / Negative ion bombardment / SAW / Lamb wave / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 207, US2015-50, pp. 25-30, Sept. 2015. |
Paper # |
US2015-50 |
Date of Issue |
2015-08-27 (US) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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US2015-50 |
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