Paper Abstract and Keywords |
Presentation |
2015-10-23 11:00
Surface activation process of GaAs photocathode and spectroscopic analysis of its photoemission characteristics Tomoaki Masuzawa, Keigo Mitsuno, Yoshinori Hatanaka, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.) ED2015-65 Link to ES Tech. Rep. Archives: ED2015-65 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Due to the tremendous demands for high-power, coherent THz light generation, electron sources with high operation speed and high current are being studied. One of the candidates for such electron sources is GaAs photocathode having negative electron affinity (NEA) surface. By utilizing NEA, such electron source may convert optical input into electron beam at high efficiency. In addition, pulsed laser enables potential pico and femto second operation, making NEA photocathode promising for these applications. However, formation of NEA surface on GaAs is not well understood due to the high reactivity of the NEA surface. In this study, we have investigated the surface activation process of GaAs by means of photoemission spectroscopy, and clarified the relationship between Cs and O2 exposure and surface electron affinity. The photoemission spectra showed that optimized balance of Cs and O is essential to form NEA surface on GaAs. It was also suggested that photoemission characteristics was not affected from surface degradation when excitation light has wavelength shorter than 500 nm. These result should lead to better understanding of physical model of surface activation, as well as to better engineering for stable high speed, high current photocathodes. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaAs / Photocathode / Negative electron affinity / Surface activation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 264, ED2015-65, pp. 57-59, Oct. 2015. |
Paper # |
ED2015-65 |
Date of Issue |
2015-10-15 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2015-65 Link to ES Tech. Rep. Archives: ED2015-65 |
Conference Information |
Committee |
ED |
Conference Date |
2015-10-22 - 2015-10-23 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2015-10-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Surface activation process of GaAs photocathode and spectroscopic analysis of its photoemission characteristics |
Sub Title (in English) |
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Keyword(1) |
GaAs |
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Photocathode |
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Negative electron affinity |
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Surface activation |
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1st Author's Name |
Tomoaki Masuzawa |
1st Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
2nd Author's Name |
Keigo Mitsuno |
2nd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
3rd Author's Name |
Yoshinori Hatanaka |
3rd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
4th Author's Name |
Yoichiro Neo |
4th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
5th Author's Name |
Hidenori Mimura |
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Shizuoka University (Shizuoka Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-10-23 11:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2015-65 |
Volume (vol) |
vol.115 |
Number (no) |
no.264 |
Page |
pp.57-59 |
#Pages |
3 |
Date of Issue |
2015-10-15 (ED) |
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