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Presentation 2015-10-23 11:00
Surface activation process of GaAs photocathode and spectroscopic analysis of its photoemission characteristics
Tomoaki Masuzawa, Keigo Mitsuno, Yoshinori Hatanaka, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.) ED2015-65 Link to ES Tech. Rep. Archives: ED2015-65
Abstract (in Japanese) (See Japanese page) 
(in English) Due to the tremendous demands for high-power, coherent THz light generation, electron sources with high operation speed and high current are being studied. One of the candidates for such electron sources is GaAs photocathode having negative electron affinity (NEA) surface. By utilizing NEA, such electron source may convert optical input into electron beam at high efficiency. In addition, pulsed laser enables potential pico and femto second operation, making NEA photocathode promising for these applications. However, formation of NEA surface on GaAs is not well understood due to the high reactivity of the NEA surface. In this study, we have investigated the surface activation process of GaAs by means of photoemission spectroscopy, and clarified the relationship between Cs and O2 exposure and surface electron affinity. The photoemission spectra showed that optimized balance of Cs and O is essential to form NEA surface on GaAs. It was also suggested that photoemission characteristics was not affected from surface degradation when excitation light has wavelength shorter than 500 nm. These result should lead to better understanding of physical model of surface activation, as well as to better engineering for stable high speed, high current photocathodes.
Keyword (in Japanese) (See Japanese page) 
(in English) GaAs / Photocathode / Negative electron affinity / Surface activation / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 264, ED2015-65, pp. 57-59, Oct. 2015.
Paper # ED2015-65 
Date of Issue 2015-10-15 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-65 Link to ES Tech. Rep. Archives: ED2015-65

Conference Information
Committee ED  
Conference Date 2015-10-22 - 2015-10-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To ED 
Conference Code 2015-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface activation process of GaAs photocathode and spectroscopic analysis of its photoemission characteristics 
Sub Title (in English)  
Keyword(1) GaAs  
Keyword(2) Photocathode  
Keyword(3) Negative electron affinity  
Keyword(4) Surface activation  
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1st Author's Name Tomoaki Masuzawa  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Keigo Mitsuno  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Yoshinori Hatanaka  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Yoichiro Neo  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Hidenori Mimura  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2015-10-23 11:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-65 
Volume (vol) vol.115 
Number (no) no.264 
Page pp.57-59 
#Pages
Date of Issue 2015-10-15 (ED) 


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