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| Presentation | 2015-12-21 14:10 Theoretical Analysis of GaAsSb-based Backward Diodes on the basis of a non-equilibrium quantum transport model Hisanari Fujita, Kosuke ono, Michihiko Suhara (TMU), Tsuyoshi Takahashi (Fujitsu Lab.)  ED2015-93 Link to ES Tech. Rep. Archives: ED2015-93 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We construct a theoretical model to explain DC I-V characteristics and frequency-dependent S-parameters of GaAsSb-based backward diodes. Each element of the equivalent circuit model of backward diodes are derived by a non-equilibrium quantum transport model and these are described by using energy relaxation time in the anode and cathode, tunneling time in the barrier layer, depletion layer transit time. Measured data are expressed by the model, considering two kinds of tunneling transport mechanism. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Backward Diodes / a non-equilibrium quantum transport model / relaxation time / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 387, ED2015-93, pp. 13-18, Dec. 2015. | |
| Paper # | ED2015-93 | |
| Date of Issue | 2015-12-14 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-93 Link to ES Tech. Rep. Archives: ED2015-93 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2015-12-21 - 2015-12-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical Analysis of GaAsSb-based Backward Diodes on the basis of a non-equilibrium quantum transport model |
| Sub Title (in English) | |
| Keyword(1) | Backward Diodes |
| Keyword(2) | a non-equilibrium quantum transport model |
| Keyword(3) | relaxation time |
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| 1st Author's Name | Hisanari Fujita |
| 1st Author's Affiliation | Tokyo Metropolitan University (TMU) |
| 2nd Author's Name | Kosuke ono |
| 2nd Author's Affiliation | Tokyo Metropolitan University (TMU) |
| 3rd Author's Name | Michihiko Suhara |
| 3rd Author's Affiliation | Tokyo Metropolitan University (TMU) |
| 4th Author's Name | Tsuyoshi Takahashi |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
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| Speaker | Author-1 |
| Date Time | 2015-12-21 14:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-93 |
| Volume (vol) | vol.115 |
| Number (no) | no.387 |
| Page | pp.13-18 |
| #Pages | 6 |
| Date of Issue | 2015-12-14 (ED) |
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