Paper Abstract and Keywords |
Presentation |
2016-01-28 13:30
[Invited Talk]
Van der Waals Junctions of Layered 2D Materials for Functional Devices Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.) SDM2015-123 Link to ES Tech. Rep. Archives: SDM2015-123 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (h-BN), and transition-metal dichalcogenides (TMDs). Here, we present our recent experiments in graphene/2D crystal van der Waals junctions: (i) large current modulation in metal/TMD/graphene vertical FET, (ii) tunneling magnetoresistance in Fe0.25TaS2/ Fe0.25TaS2 junctions, (iii) Josephson effect in NbSe2/NbSe2 junctions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
van der Waals Junctions / Vertical Field-Effect Transistor / Magnetic tunnel junction / Josephson junction / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 440, SDM2015-123, pp. 13-16, Jan. 2016. |
Paper # |
SDM2015-123 |
Date of Issue |
2016-01-21 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-123 Link to ES Tech. Rep. Archives: SDM2015-123 |
|