Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-01-28 13:30
[Invited Talk] Van der Waals Junctions of Layered 2D Materials for Functional Devices
Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.) SDM2015-123
Abstract (in Japanese) (See Japanese page) 
(in English) Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (h-BN), and transition-metal dichalcogenides (TMDs). Here, we present our recent experiments in graphene/2D crystal van der Waals junctions: (i) large current modulation in metal/TMD/graphene vertical FET, (ii) tunneling magnetoresistance in Fe0.25TaS2/ Fe0.25TaS2 junctions, (iii) Josephson effect in NbSe2/NbSe2 junctions.
Keyword (in Japanese) (See Japanese page) 
(in English) van der Waals Junctions / Vertical Field-Effect Transistor / Magnetic tunnel junction / Josephson junction / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 440, SDM2015-123, pp. 13-16, Jan. 2016.
Paper # SDM2015-123 
Date of Issue 2016-01-21 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-123

Conference Information
Committee SDM  
Conference Date 2016-01-28 - 2016-01-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2016-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Van der Waals Junctions of Layered 2D Materials for Functional Devices 
Sub Title (in English)  
Keyword(1) van der Waals Junctions  
Keyword(2) Vertical Field-Effect Transistor  
Keyword(3) Magnetic tunnel junction  
Keyword(4) Josephson junction  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomoki Machida  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Rai Moritani  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Yohta Sata  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Takehiro Yamaguchi  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
5th Author's Name Miho Arai  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
6th Author's Name Naoto Yabuki  
6th Author's Affiliation University of Tokyo (Univ. of Tokyo)
7th Author's Name Sei Morikawa  
7th Author's Affiliation University of Tokyo (Univ. of Tokyo)
8th Author's Name Satoru Masubuchi  
8th Author's Affiliation University of Tokyo (Univ. of Tokyo)
9th Author's Name Keiji Ueno  
9th Author's Affiliation Saitama University (Saitama Univ.)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2016-01-28 13:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2015-123 
Volume (vol) vol.115 
Number (no) no.440 
Page pp.13-16 
#Pages 4 
Date of Issue 2016-01-21 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan