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Paper Abstract and Keywords
Presentation 2016-01-29 10:45
Luminescence property of hexagonal boron nitride films grown on sapphire substrates by low-pressure CVD
Takaki Shimizu, Naoki Umehara, Atsushi Masuda, Kana Watanabe, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2015-38
Abstract (in Japanese) (See Japanese page) 
(in English) The luminescence property of the hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire substrates by chemical vapor deposition using BCl3 and NH3 as sources was characterized by cathodoluminescence (CL). The intensity of the emission band located at 214 nm, which can be ascribed to the recombination of free excitons of h-BN by comparison with that of the h-BN bulk crystal, increased with decreasing a reactor pressure from 20 to 5 kPa at a growth temperature of 1200 C. The influences of growth reaction and film formation on the film quality were discussed in terms of the observed CL properties and its dependence on growth conditions.
Keyword (in Japanese) (See Japanese page) 
(in English) hexagonal boron nitride / CVD / thin film / cathodoluminescence / excitonic luminescence / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 439, EID2015-38, pp. 97-100, Jan. 2016.
Paper # EID2015-38 
Date of Issue 2016-01-21 (EID) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2015-38

Conference Information
Committee EID ITE-IDY IEE-EDD SID-JC IEIJ-SSL  
Conference Date 2016-01-28 - 2016-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Joint Meeting of Emissive / Non-Emissive Displays 
Paper Information
Registration To EID 
Conference Code 2016-01-EID-IDY-EDD-JC-SSL 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Luminescence property of hexagonal boron nitride films grown on sapphire substrates by low-pressure CVD 
Sub Title (in English)  
Keyword(1) hexagonal boron nitride  
Keyword(2) CVD  
Keyword(3) thin film  
Keyword(4) cathodoluminescence  
Keyword(5) excitonic luminescence  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takaki Shimizu  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Naoki Umehara  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Atsushi Masuda  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Kana Watanabe  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Tetsuya Kouno  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
6th Author's Name Hiroko Kominami  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
7th Author's Name Kazuhiko Hara  
7th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2016-01-29 10:45:00 
Presentation Time 8 minutes 
Registration for EID 
Paper # EID2015-38 
Volume (vol) vol.115 
Number (no) no.439 
Page pp.97-100 
#Pages 4 
Date of Issue 2016-01-21 (EID) 

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