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Paper Abstract and Keywords
Presentation 2016-03-03 14:00
[Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128
Abstract (in Japanese) (See Japanese page) 
(in English) We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO) semiconductor. Characterizations in bending experiments of flexible ZnO-TFTs and DC characteristics for fully transparent ZnO-TFTs were reported. The self-switching nano-diodes (SSD) were fabricated by using electron beam lithography and wet chemical etching at room temperature. ZnO-SSDs on glass substrate and a fully transparent ZnO-SSD were also characterized for transparent device applications.
Keyword (in Japanese) (See Japanese page) 
(in English) Zinc oxide / Transparent / Flexible / Thin-film transistor / Self-switching nano-diode / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 469, ED2015-121, pp. 1-6, March 2016.
Paper # ED2015-121 
Date of Issue 2016-02-25 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-121 SDM2015-128

Conference Information
Committee ED SDM  
Conference Date 2016-03-03 - 2016-03-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Centennial Hall, Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nanodevices and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2016-03-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Recent Development in Thin-Film Device Applications using Oxide Semiconductors 
Sub Title (in English)  
Keyword(1) Zinc oxide  
Keyword(2) Transparent  
Keyword(3) Flexible  
Keyword(4) Thin-film transistor  
Keyword(5) Self-switching nano-diode  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Toshihiko Maemoto  
1st Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
2nd Author's Name Yi Sun  
2nd Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
3rd Author's Name Souhei Matsuda  
3rd Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
4th Author's Name Shota Sasaki  
4th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
5th Author's Name Kouhei Ashida  
5th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
6th Author's Name Oliver Kaltstein  
6th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
7th Author's Name Masatoshi Koyama  
7th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
8th Author's Name Kazuto Koike  
8th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
9th Author's Name Mitsuaki Yano  
9th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
10th Author's Name Shigehiko Sasa  
10th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
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Speaker Author-1 
Date Time 2016-03-03 14:00:00 
Presentation Time 50 minutes 
Registration for ED 
Paper # ED2015-121, SDM2015-128 
Volume (vol) vol.115 
Number (no) no.469(ED), no.470(SDM) 
Page pp.1-6 
#Pages 6 
Date of Issue 2016-02-25 (ED, SDM) 


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