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Paper Abstract and Keywords
Presentation 2016-07-08 14:15
Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces
Koki Shinohara, Takahiro Suzuki, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.) MR2016-16 Link to ES Tech. Rep. Archives: MR2016-16
Abstract (in Japanese) (See Japanese page) 
(in English) We attempted to add perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co_2FeSi (CFS) alloy thin films with potential application in magnetic tunnel junction (MTJ). CFS/MgO stacked structure showed PMA by setting the thickness of CFS below 0.7 nm. It was confirmed PMA is originated from CFS/MgO interfaces. Furthermore, we found that more stable PMA was obtained by introducing oxygen exposure process after the deposition of CFS layer before the preparation of MgO layer. This process is very useful as a method to modify the structure and chemical state at the interface and effective to form ferromagnetic CFS layers with both half-metallic ferromagnetism and PMA.
Keyword (in Japanese) (See Japanese page) 
(in English) Full-Heusler alloys / Perpendicular magnetic anisotropy / Half-metallic ferromagnets / Interfacial magnetic anisotropy / Magnetic random access memory / / /  
Reference Info. IEICE Tech. Rep., vol. 116, July 2016.
Paper #  
Date of Issue 2016-07-01 (MR) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MR2016-16 Link to ES Tech. Rep. Archives: MR2016-16

Conference Information
Committee MRIS ITE-MMS  
Conference Date 2016-07-08 - 2016-07-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Chuo Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Solid State Memory, Media, etc. 
Paper Information
Registration To MRIS 
Conference Code 2016-07-MR-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces 
Sub Title (in English)  
Keyword(1) Full-Heusler alloys  
Keyword(2) Perpendicular magnetic anisotropy  
Keyword(3) Half-metallic ferromagnets  
Keyword(4) Interfacial magnetic anisotropy  
Keyword(5) Magnetic random access memory  
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1st Author's Name Koki Shinohara  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Takahiro Suzuki  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Yota Takamura  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Shigeki Nakagawa  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2016-07-08 14:15:00 
Presentation Time 25 minutes 
Registration for MRIS 
Paper # MR2016-16 
Volume (vol) vol.116 
Number (no) no.125 
Page pp.19-24 
#Pages
Date of Issue 2016-07-01 (MR) 


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