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Paper Abstract and Keywords
Presentation 2016-08-03 15:05
Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-67 ICD2016-35
Abstract (in Japanese) (See Japanese page) 
(in English) The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are measured and statistically analyzed. It was found that the drain-induced variability and “within-device” variability increase as the NW width decreases to 2nm. The origin of the increased variability is ascribed to quantum confinement due to NW width asymmetry at the source and drain.
Keyword (in Japanese) (See Japanese page) 
(in English) Nanowire MOSFET / Variability / DIBL / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 172, SDM2016-67, pp. 123-126, Aug. 2016.
Paper # SDM2016-67 
Date of Issue 2016-07-25 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-67 ICD2016-35

Conference Information
Committee ICD SDM ITE-IST  
Conference Date 2016-08-01 - 2016-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Central Electric Club 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2016-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm 
Sub Title (in English)  
Keyword(1) Nanowire MOSFET  
Keyword(2) Variability  
Keyword(3) DIBL  
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1st Author's Name Tomoko Mizutani  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Kiyoshi Takeuchi  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Ryota Suzuki  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Takuya Saraya  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
5th Author's Name Masaharu Kobayashi  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
6th Author's Name Toshiro Hiramoto  
6th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2016-08-03 15:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2016-67, ICD2016-35 
Volume (vol) vol.116 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.123-126 
#Pages 4 
Date of Issue 2016-07-25 (SDM, ICD) 

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