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Paper Abstract and Keywords
Presentation 2016-08-03 14:40
PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V
Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK) SDM2016-66 ICD2016-34
Abstract (in Japanese) (See Japanese page) 
(in English) We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltage of below 1V. and the drain voltage of 0.1V when the N layer of the body tied region changes from the N+ to the N- . Device simulations reproduced the difference of the necessity body voltage on appearance of the super steep SS between the N+ and the N-. In addition, results of simulation show the optimized width of N layer with both the N+ and the N-.
Keyword (in Japanese) (See Japanese page) 
(in English) SS / SOI MOSFET / BIP / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 172, SDM2016-66, pp. 117-121, Aug. 2016.
Paper # SDM2016-66 
Date of Issue 2016-07-25 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-66 ICD2016-34

Conference Information
Committee ICD SDM ITE-IST  
Conference Date 2016-08-01 - 2016-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Central Electric Club 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2016-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V 
Sub Title (in English)  
Keyword(1) SS  
Keyword(2) SOI MOSFET  
Keyword(3) BIP  
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1st Author's Name Takahiro Yoshida  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Jiro Ida  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Takashi Horii  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name Masao Okihara  
4th Author's Affiliation LAPIS Semiconductor (Lapis)
5th Author's Name Yasuo Arai  
5th Author's Affiliation High Energy Accelerator Research Organization (KEK)
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Speaker Author-1 
Date Time 2016-08-03 14:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2016-66, ICD2016-34 
Volume (vol) vol.116 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.117-121 
#Pages 5 
Date of Issue 2016-07-25 (SDM, ICD) 

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