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| Presentation | 2016-10-20 14:55 C-Band GaN Diode Rectifier for HySIC MPT System Satoshi Yoshida (Kagoshima Univ.), Akihira Miyachi (JAXA), Ryoko Kishikawa, Masahiro Horibe (AIST), Kenjiro Nishikawa (Kagoshima Univ.), Shigeo Kawasaki (JAXA)  EMCJ2016-69 MW2016-101 EST2016-65 Link to ES Tech. Rep. Archives: MW2016-101 EST2016-65 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we evaluate a 5.8 GHz rectifier using GaN diode for space solar power system application. As a first step, a single diode was measured and modeled by fitting. Finally, a 5.8 GHz high power rectifier was designed and fabricated using RO4350 substrate. Measured RF–DC conversion efficiency and output DC power at 5.9 GHz (40 dBm) are 32.6% and 3042mW, respectively. This report makes a first step for future miniaturization by the hybrid semiconductor integrated circuit (HySIC) technology which utilizes different type semiconductor devices. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Wireless Power Transmission / space solar power system / hybrid semiconductor integrated circuit / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 254, MW2016-101, pp. 53-56, Oct. 2016. | |
| Paper # | MW2016-101 | |
| Date of Issue | 2016-10-13 (EMCJ, MW, EST) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EMCJ2016-69 MW2016-101 EST2016-65 Link to ES Tech. Rep. Archives: MW2016-101 EST2016-65 |
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| Conference Information | |
| Committee | EMCJ IEE-EMC MW EST |
| Conference Date | 2016-10-20 - 2016-10-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, Electromagnetic simulation, EMC, etc. |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2016-10-EMCJ-EMC-MW-EST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-Band GaN Diode Rectifier for HySIC MPT System |
| Sub Title (in English) | |
| Keyword(1) | Wireless Power Transmission |
| Keyword(2) | space solar power system |
| Keyword(3) | hybrid semiconductor integrated circuit |
| Keyword(4) | |
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| 1st Author's Name | Satoshi Yoshida |
| 1st Author's Affiliation | Kagoshima University (Kagoshima Univ.) |
| 2nd Author's Name | Akihira Miyachi |
| 2nd Author's Affiliation | JAXA (JAXA) |
| 3rd Author's Name | Ryoko Kishikawa |
| 3rd Author's Affiliation | AIST (AIST) |
| 4th Author's Name | Masahiro Horibe |
| 4th Author's Affiliation | AIST (AIST) |
| 5th Author's Name | Kenjiro Nishikawa |
| 5th Author's Affiliation | Kagoshima University (Kagoshima Univ.) |
| 6th Author's Name | Shigeo Kawasaki |
| 6th Author's Affiliation | JAXA (JAXA) |
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| Speaker | Author-1 |
| Date Time | 2016-10-20 14:55:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | EMCJ2016-69, MW2016-101, EST2016-65 |
| Volume (vol) | vol.116 |
| Number (no) | no.253(EMCJ), no.254(MW), no.255(EST) |
| Page | pp.53-56 |
| #Pages | 4 |
| Date of Issue | 2016-10-13 (EMCJ, MW, EST) |
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