| Paper Abstract and Keywords |
| Presentation |
2016-11-29 09:00
Measurement of Vth Variation due to STI Stress and Inverse Narrow Channel Effect at Ultra-Low Voltage in a Variability-Suppressed Process Yasuhiro Ogasahara, Hanpei Koike (AIST) CPM2016-76 ICD2016-37 IE2016-71 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This paper demonstrates notable impact of Vth shift due to STI-induced dopant redistribution on ultra-low voltage designs. 2.5X Ion change at ultra-low voltages due to STI was measured on a 65nm SOTB CMOS process. Serious 6X Ion change due to inverse narrow channel effects was also observed. We propose ring oscillator based measurement procedure observing Vth shift by exploiting flexible Vth controllability by backgate biasing of SOTB process. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
FD-SOI / SOTB / process variability / STI stress effect / inverese narrow channel effect / ultra-low voltage circuits / / |
| Reference Info. |
IEICE Tech. Rep., vol. 116, no. 334, ICD2016-37, pp. 1-6, Nov. 2016. |
| Paper # |
ICD2016-37 |
| Date of Issue |
2016-11-22 (CPM, ICD, IE) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
CPM2016-76 ICD2016-37 IE2016-71 |
| Conference Information |
| Committee |
VLD DC CPSY RECONF CPM ICD IE |
| Conference Date |
2016-11-28 - 2016-11-30 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Ritsumeikan University, Osaka Ibaraki Campus |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Design Gaia 2016 -New Field of VLSI Design- |
| Paper Information |
| Registration To |
ICD |
| Conference Code |
2016-11-VLD-DC-CPSY-RECONF-CPM-ICD-IE |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Measurement of Vth Variation due to STI Stress and Inverse Narrow Channel Effect at Ultra-Low Voltage in a Variability-Suppressed Process |
| Sub Title (in English) |
|
| Keyword(1) |
FD-SOI |
| Keyword(2) |
SOTB |
| Keyword(3) |
process variability |
| Keyword(4) |
STI stress effect |
| Keyword(5) |
inverese narrow channel effect |
| Keyword(6) |
ultra-low voltage circuits |
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Yasuhiro Ogasahara |
| 1st Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name |
Hanpei Koike |
| 2nd Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
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| Speaker |
Author-1 |
| Date Time |
2016-11-29 09:00:00 |
| Presentation Time |
25 minutes |
| Registration for |
ICD |
| Paper # |
CPM2016-76, ICD2016-37, IE2016-71 |
| Volume (vol) |
vol.116 |
| Number (no) |
no.333(CPM), no.334(ICD), no.335(IE) |
| Page |
pp.1-6 |
| #Pages |
6 |
| Date of Issue |
2016-11-22 (CPM, ICD, IE) |