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| Presentation | 2016-12-12 15:45 Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric)  ED2016-63 CPM2016-96 LQE2016-79 Link to ES Tech. Rep. Archives: ED2016-63 CPM2016-96 LQE2016-79 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with i-AlN/i-GaN epitaxial hetero-junction channel which could be fabricated without using (Al)GaN etching process. The fabricated GaN MOS-HFET with short channel length of 1m exhibited a threshold voltage of +3.0 V with a maximum drain current of 0.4 A/mm. In addition, a maximum channel mobility of 190 cm2/Vs was estimated from a linear region of transfer characteristics in fabricated GaN MOS-HFET with long channel length of 50 m. These results are very promising for applying GaN MOS-HFETs to high power switching devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN MOS-HFET / ALD-Al2O3 film / AlN barrier / Si ion implantation / hetero-junction channel / high power switching device / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 356, ED2016-63, pp. 31-34, Dec. 2016. | |
| Paper # | ED2016-63 | |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-63 CPM2016-96 LQE2016-79 Link to ES Tech. Rep. Archives: ED2016-63 CPM2016-96 LQE2016-79 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2016-12-12 - 2016-12-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-12-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Normally-off operation of planar GaN MOS-HFET |
| Sub Title (in English) | |
| Keyword(1) | GaN MOS-HFET |
| Keyword(2) | ALD-Al2O3 film |
| Keyword(3) | AlN barrier |
| Keyword(4) | Si ion implantation |
| Keyword(5) | hetero-junction channel |
| Keyword(6) | high power switching device |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuma Nanjo |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 2nd Author's Name | Tetsuro Hayashida |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 3rd Author's Name | Hidetoshi Koyama |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 4th Author's Name | Akifumi Imai |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 5th Author's Name | Akihiko Furukawa |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 6th Author's Name | Mikio Yamamuka |
| 6th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
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| Speaker | Author-1 |
| Date Time | 2016-12-12 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-63, CPM2016-96, LQE2016-79 |
| Volume (vol) | vol.116 |
| Number (no) | no.356(ED), no.357(CPM), no.358(LQE) |
| Page | pp.31-34 |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
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