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Paper Abstract and Keywords
Presentation 2016-12-12 15:45
Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Abstract (in Japanese) (See Japanese page) 
(in English) Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with i-AlN/i-GaN epitaxial hetero-junction channel which could be fabricated without using (Al)GaN etching process. The fabricated GaN MOS-HFET with short channel length of 1m exhibited a threshold voltage of +3.0 V with a maximum drain current of 0.4 A/mm. In addition, a maximum channel mobility of 190 cm2/Vs was estimated from a linear region of transfer characteristics in fabricated GaN MOS-HFET with long channel length of 50 m. These results are very promising for applying GaN MOS-HFETs to high power switching devices.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN MOS-HFET / ALD-Al2O3 film / AlN barrier / Si ion implantation / hetero-junction channel / high power switching device / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 356, ED2016-63, pp. 31-34, Dec. 2016.
Paper # ED2016-63 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-63 CPM2016-96 LQE2016-79

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To ED 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Normally-off operation of planar GaN MOS-HFET 
Sub Title (in English)  
Keyword(1) GaN MOS-HFET  
Keyword(2) ALD-Al2O3 film  
Keyword(3) AlN barrier  
Keyword(4) Si ion implantation  
Keyword(5) hetero-junction channel  
Keyword(6) high power switching device  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuma Nanjo  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Tetsuro Hayashida  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Hidetoshi Koyama  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Akifumi Imai  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Akihiko Furukawa  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
6th Author's Name Mikio Yamamuka  
6th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
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Speaker Author-1 
Date Time 2016-12-12 15:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-63, CPM2016-96, LQE2016-79 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.31-34 
#Pages 4 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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