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Paper Abstract and Keywords
Presentation 2016-12-12 14:15
Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates
Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-60 CPM2016-93 LQE2016-76
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated and characterized Au/Ni Schottky contacts on cleaved m-plane free-standing n-GaN surfaces (i) without any surface treatment, (ii) with H2O2 treatment, or (iii) with HCl treatment. The as-cleaved samples showed I-V characteristics with small n-values and less diode-to-diode variation. However, the H2O2 samples had much smaller Schottky barrier height. Whereas the HCl samples exhibited significantly large diode-to-diode variation. It is confirmed that cleaving without any surface treatment can provide a cleaner surface to form Schottky diodes on m-plane n-GaN surfaces than that with conventional HCl treatment.
Keyword (in Japanese) (See Japanese page) 
(in English) m-plane GaN / cleaving / surface treatment / Schottky contact / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 356, ED2016-60, pp. 15-20, Dec. 2016.
Paper # ED2016-60 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-60 CPM2016-93 LQE2016-76

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To ED 
Conference Code 2016-12-CPM-LQE-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates 
Sub Title (in English) * 
Keyword(1) m-plane GaN  
Keyword(2) cleaving  
Keyword(3) surface treatment  
Keyword(4) Schottky contact  
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1st Author's Name Kenji Shiojima  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Moe Naganawa  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Tomoyoshi Mishima  
3rd Author's Affiliation Hosei University (Hosei Univ.)
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Speaker Author-1 
Date Time 2016-12-12 14:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-60, CPM2016-93, LQE2016-76 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.15-20 
#Pages 6 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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