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Paper Abstract and Keywords
Presentation 2016-12-12 13:30
First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film
Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99
Abstract (in Japanese) (See Japanese page) 
(in English) For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created in a metal oxide (MO) is important. These days, many studies predict characteristics of conducting path by using first-principles calculations, due to difficulties of direct observation of them. However, many calculations adopt TMO bulk single crystal model, whereas many ReRAM samples used in experiments consist of polycrystalline thin film, which means that the formation of conducting path in grain boundary of MO polycrystalline thin film is not considered in calculations. In this study, we experimentally clarified that the resistive switching is caused in the grain boundaries of the polycrystalline NiO film. Focusing on the surface orientation-dependences of MO surface conductivities, we also executed a first-principles molecular dynamics (MD) simulation at a finite temperature and clarified the drastic change of conductivity by a small amount of atom migration on the NiO grain surfaces. Since the MgO has the same tendencies, we suggested a model that can explain changes of the conductivities on MO grain surfaces by tiling micro surfaces that have various conductivities.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / Grain boundary / First-principles calculation / NiO / MgO / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 355, SDM2016-99, pp. 41-44, Dec. 2016.
Paper # SDM2016-99 
Date of Issue 2016-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2016-18 SDM2016-99

Conference Information
Committee SDM EID  
Conference Date 2016-12-12 - 2016-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon Related Materials 
Paper Information
Registration To SDM 
Conference Code 2016-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) Grain boundary  
Keyword(3) First-principles calculation  
Keyword(4) NiO  
Keyword(5) MgO  
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1st Author's Name Takumi Moriyama  
1st Author's Affiliation Tottori University (Tottori Univ.)
2nd Author's Name Sohta Hida  
2nd Author's Affiliation Tottori University (Tottori Univ.)
3rd Author's Name Takahiro Yamasaki  
3rd Author's Affiliation National Institute for Materials Science (NIMS)
4th Author's Name Takahisa Ohno  
4th Author's Affiliation National Institute for Materials Science (NIMS)
5th Author's Name Satoru Kishida  
5th Author's Affiliation Tottori University (Tottori Univ.)
6th Author's Name Kentaro Kinoshita  
6th Author's Affiliation Tottori University (Tottori Univ.)
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Speaker Author-1 
Date Time 2016-12-12 13:30:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2016-18, SDM2016-99 
Volume (vol) vol.116 
Number (no) no.354(EID), no.355(SDM) 
Page pp.41-44 
#Pages 4 
Date of Issue 2016-12-05 (EID, SDM) 

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