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Paper Abstract and Keywords
Presentation 2016-12-13 10:55
Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer
Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic) ED2016-72 CPM2016-105 LQE2016-88
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) with emission wavelength of 270 - 280 nm have been attracting much attention as an alternative to conventional mercury lamp. In spite of previous studies, however, the external quantum efficiency (EQE) of the DUV-LEDs remains much lower than that of visible LEDs owing to low light extraction from LED chips. We demonstrated the highly effective DUV-LEDs with the external quantum efficiency (EQE) of over 10% at 20 mA cw current by improving the light extraction by using DUV transparent p-contact layer and DUV reflective metal contact.
Keyword (in Japanese) (See Japanese page) 
(in English) DUV-LED / p-AlGaN / reflective electrode / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 358, LQE2016-88, pp. 75-78, Dec. 2016.
Paper # LQE2016-88 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-72 CPM2016-105 LQE2016-88

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To LQE 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer 
Sub Title (in English)  
Keyword(1) DUV-LED  
Keyword(2) p-AlGaN  
Keyword(3) reflective electrode  
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1st Author's Name Takuya Mino  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Hideki Hirayama  
2nd Author's Affiliation RIKEN (RIKEN)
3rd Author's Name Takayoshi Takano  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
4th Author's Name Koji Goto  
4th Author's Affiliation Panasonic Corporation (Panasonic)
5th Author's Name Mitsuhiko Ueda  
5th Author's Affiliation Panasonic Corporation (Panasonic)
6th Author's Name Kenji Tsubaki  
6th Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2016-12-13 10:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2016-72, CPM2016-105, LQE2016-88 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.75-78 
#Pages 4 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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