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Paper Abstract and Keywords
Presentation 2017-01-27 13:25
Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184
Abstract (in Japanese) (See Japanese page) 
(in English) Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD simulation. After the strain in GaN HEMTs was calculated by a process simulator, polarization charges generated from the strain were added to that generated from spontaneous and piezoelectric polarization of AlGaN and GaN. We have simulated the electrical characteristics such as drain current and gate leakage current depending on gate voltage by varying the residual stress from compressive to tensile values. In the case of the tensile residual stress in the SiN passivation on AlGaN barrier, compressive stress of YY component was observed in AlGaN and GaN layer under the gate electrodes. This compressive stress resulted to increase of the concentration of two dimensional electron gas. Therefore, the drain current increased and the pinch off voltage decreased as compared with the case without residual stress. On the other hand, the gate leakage current decreased due to the rapidly change of the stress direction around the boundary between the gate electrode and the SiN passivation. In the case of the compressive residual stress in SiN, the opposite trends were obtained for the mechanical and electrical characteristics as compared with the tensile residual stress case.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / Residual stress / Strain / Drain current / Gate current / TCAD simulation / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 431, ED2016-108, pp. 63-68, Jan. 2017.
Paper # ED2016-108 
Date of Issue 2017-01-19 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-108 MW2016-184

Conference Information
Committee MW ED  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2017-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) Residual stress  
Keyword(3) Strain  
Keyword(4) Drain current  
Keyword(5) Gate current  
Keyword(6) TCAD simulation  
Keyword(7)  
Keyword(8)  
1st Author's Name Toshiyuki Oishi  
1st Author's Affiliation Saga university (Saga univ.)
2nd Author's Name Yutaro Yamaguchi  
2nd Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
3rd Author's Name Koji Yamanaka  
3rd Author's Affiliation Mitsubishi Electric corporation (Mitsubishi Electric corp.)
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Speaker Author-1 
Date Time 2017-01-27 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-108, MW2016-184 
Volume (vol) vol.116 
Number (no) no.431(ED), no.432(MW) 
Page pp.63-68 
#Pages 6 
Date of Issue 2017-01-19 (ED, MW) 

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