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| Presentation | 2017-01-27 11:20 An X-band Low Loss/High Power SPST Switch Using GaN on Si Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric)  ED2016-106 MW2016-182 Link to ES Tech. Rep. Archives: ED2016-106 MW2016-182 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | An X-band low loss and high power switch using GaN on Si has been developed. The high power switch utilized asymmetric circuit topology and parallel resonator with inductor and FET for low insertion loss. The switch MMIC is fabricated in X-band with a size of 1.05x1.95mm2. The measured insertion loss at RX-mode was 1.28dB and the isolation at TX-mode was 11dB in worst case in 30% fractional bandwidth of X-band. Furthermore, measured isolation compression was less than 0.5dB at 43.1dBm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | switch / GaN on Si / MMIC / Low-loss / High-power / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 432, MW2016-182, pp. 53-56, Jan. 2017. | |
| Paper # | MW2016-182 | |
| Date of Issue | 2017-01-19 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-106 MW2016-182 Link to ES Tech. Rep. Archives: ED2016-106 MW2016-182 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2017-01-26 - 2017-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2017-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An X-band Low Loss/High Power SPST Switch Using GaN on Si |
| Sub Title (in English) | |
| Keyword(1) | switch |
| Keyword(2) | GaN on Si |
| Keyword(3) | MMIC |
| Keyword(4) | Low-loss |
| Keyword(5) | High-power |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryota Komaru |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 2nd Author's Name | Masatake Hangai |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 3rd Author's Name | Kazuhiko Nakahara |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 4th Author's Name | Hiroyuki Okazaki |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 5th Author's Name | Koji Yamanaka |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
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| Speaker | Author-1 |
| Date Time | 2017-01-27 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2016-106, MW2016-182 |
| Volume (vol) | vol.116 |
| Number (no) | no.431(ED), no.432(MW) |
| Page | pp.53-56 |
| #Pages | 4 |
| Date of Issue | 2017-01-19 (ED, MW) |
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